Preparation and characterization of porous silicon photoelectrode for dye sensitized solar cells

Nanostructured porous silicon (PS) samples were prepared by electrochemical anodic dissolution of doped silicon (p-Si) of (100) orientation at constant current density of 30 mA/cm$^2$ for different etching times 10 and 60 min. The samples were characterized by XRD and SEM. The particle size was calculated from XRD using Scherrer’s approximation are in the range of 12 to 61 nm and the SEM images confirmed the difference in porosities of the sample. The samples were sensitized with chloroaluminium phthalocyanine (ClAlPc) to fabricate Dyesensitized solar cells (DSSCs). The bandgaps from UV-Vis and photoluminescence measurements are in the range of 1.5 to 1.8 eV. The photocurrent and photovoltage of the cells were measured using Keithely source meter. The maximum conversion efficiency of 2.8 % is observed and results are discussed.