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Эта публикация цитируется в 1 научной статье (всего в 1 статье)
Papers, presented at NANO-2015
Observation of insulating and metallictype behavior in $\mathrm{Bi}_2\mathrm{Se}_3$ transistor at room temperature
V. Gunasekaran, G. H. Park, K. S. Kim, M. Suemitsu, H. Fukidome Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aobaku, Sendai 980-8577, Japan
Аннотация:
Topological insulators are a new class of electronic materials with promising device applications. In this work, multilayer $\mathrm{Bi}_2\mathrm{Se}_3$ field effect transistors (FETs) are prepared by standard lithography followed by mechanical exfoliation method. Electrical characterization of the FET has been studied at room temperature. We observed both insulating and metallic-type transport behavior when device was gate-biased. Electron-phonon scattering plays a vital role in observing this behavior. We assume that this sort of behavior could be raised from the inherent metallic surface and semiconducting interior bulk properties of $\mathrm{Bi}_2\mathrm{Se}_3$.
Поступила в редакцию: 09.02.2016
Образец цитирования:
V. Gunasekaran, G. H. Park, K. S. Kim, M. Suemitsu, H. Fukidome, “Observation of insulating and metallictype behavior in $\mathrm{Bi}_2\mathrm{Se}_3$ transistor at room temperature”, Наносистемы: физика, химия, математика, 7:3 (2016), 565–568
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/nano242 https://www.mathnet.ru/rus/nano/v7/i3/p565
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