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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
FROM GUEST EDITORIAL
Graphene on silicon carbide as a basis for gas- and biosensor applications
S. P. Lebedeva, V. Yu. Davydova, D. Yu. Usachovb, A. N. Smirnovac, V. S. Levitskiid, I. A. Eliseyeva, E. V. Gushchinaa, M. S. Dunaevskiia, O. Yu. Vilkovb, A. G. Rybkinb, A. A. Lebedeva, S. N. Novikove, Yu. N. Makarovf a Ioffe Institute, 26 Politekhnicheskaya, 194021 St.Petersburg, Russia
b Saint Petersburg State University, 199034 St.Petersburg, Russia
c ITMO University, 49 Kronverkskiy prospekt, 197101 St.Petersburg, Russia
d R&D Center TFTE, 28 Politekhnicheskaya, 194064 St. Petersburg, Russia
e Aalto University, Micronova, Tietotie 3, FI-02150, Espoo, Finland
f Nitride Crystals Inc., 11729 Deer Park, NY, United States
Аннотация:
The structural, chemical, and electronic characteristics of graphene grown by thermal decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology allows the creation of high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. The performance of graphene on SiC as a gas sensor or a biosensor was tested. The sensitivity of gas sensors to NO$_2$ on the order of 1 ppb and that of biosensors to fluorescein with concentration on the order of 1 ng/mL and to bovine serum albumin-fluorescein conjugate with concentration on the order of 1 ng/mL were determined.
Ключевые слова:
graphene, silicon carbide, thermal decomposition, Raman spectroscopy, AFM, XPS, ARPES.
Поступила в редакцию: 20.06.2017
Образец цитирования:
S. P. Lebedev, V. Yu. Davydov, D. Yu. Usachov, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, E. V. Gushchina, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, S. N. Novikov, Yu. N. Makarov, “Graphene on silicon carbide as a basis for gas- and biosensor applications”, Наносистемы: физика, химия, математика, 9:1 (2018), 95–97
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/nano135 https://www.mathnet.ru/rus/nano/v9/i1/p95
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Страница аннотации: | 56 | PDF полного текста: | 27 |
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