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PHYSICS
Electrical properties of “metal-carbon film” contact
Rostyslav V. Shalayev, Anatoliy I. Izotov, Vladimir V. Syrotkin Galkin Donetsk Institute for Physics and Engineering, Donetsk, Russia
Аннотация:
Magnetron sputtering was used to obtain carbon films on of metal substrates of two types: titanium and tool chromium steel. The temperature dependence of the resistance of the films, which has a semiconductor character, has been studied. The current-voltage characteristics of the metal-carbon film contact were determined, which indicate the presence of the Schottky barrier junction.
Ключевые слова:
carbon film, magnetron sputtering, metal-semiconductor contact, Schottky barrier.
Поступила в редакцию: 24.01.2023 Исправленный вариант: 02.02.2023 Принята в печать: 05.02.2023
Образец цитирования:
Rostyslav V. Shalayev, Anatoliy I. Izotov, Vladimir V. Syrotkin, “Electrical properties of “metal-carbon film” contact”, Наносистемы: физика, химия, математика, 14:1 (2023), 86–88
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/nano1165 https://www.mathnet.ru/rus/nano/v14/i1/p86
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