|
PHYSICS
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
A. E. Atamuratova, M. Khalilloeva, A. Abdikarimova, Z. A. Atamuratovaa, M. Kittlerb, R. Granznerb, F. Schwierzb a Urganch State University, Kh. Olimjan, 14, Urganch, 220100, Uzbekistan
b Technical University of Ilmenau, Ehrenbergstrasse, 29, 98693 Ilmenau, Germany
Аннотация:
Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate. A trigate SOI JLMOSFET with gate length L$_{\operatorname{gate}}$, a silicon body width W$_{\operatorname{tin}}$ and thickness of 10 nm are simulated. In order to calculate the DIBL, the transfer characteristics of JLMOSFETs was simulated at a donor concentration of $5\cdot10^{19}$cm$^{-3}$ in the silicon body. The equivalent oxide thicknesses of the HfO$_2$ gate insulator used in simulation was 0.55 nm. Simulation result showed the DIBL for the trigate JLMOSFET depended on the length of the lateral part of the gate L$_{\operatorname{ext}}$. DIBL is high for devices with gates having extended lateral parts. This is a result of parasitic source (drain)-gate capacitance coupling which is higher for longer L$_{\operatorname{ext}}$.
Ключевые слова:
Junctionless MOSFET, DIBL, parasitic capacitance.
Поступила в редакцию: 08.07.2016 Исправленный вариант: 30.08.2016
Образец цитирования:
A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, F. Schwierz, “Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate”, Наносистемы: физика, химия, математика, 8:1 (2017), 75–78
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/nano11 https://www.mathnet.ru/rus/nano/v8/i1/p75
|
Статистика просмотров: |
Страница аннотации: | 51 | PDF полного текста: | 100 |
|