Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

Short channel effects such as DIBL are compared for trigate SOI Junctionless MOSFET with extended and non-extended lateral part of the gate. A trigate SOI JLMOSFET with gate length L$_{\operatorname{gate}}$, a silicon body width W$_{\operatorname{tin}}$ and thickness of 10 nm are simulated. In order to calculate the DIBL, the transfer characteristics of JLMOSFETs was simulated at a donor concentration of $5\cdot10^{19}$cm$^{-3}$ in the silicon body. The equivalent oxide thicknesses of the HfO$_2$ gate insulator used in simulation was 0.55 nm. Simulation result showed the DIBL for the trigate JLMOSFET depended on the length of the lateral part of the gate L$_{\operatorname{ext}}$. DIBL is high for devices with gates having extended lateral parts. This is a result of parasitic source (drain)-gate capacitance coupling which is higher for longer L$_{\operatorname{ext}}$.