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Математические заметки, 2016, том 100, выпуск 6, статья опубликована в англоязычной версии журнала
(Mi mzm11447)
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Эта публикация цитируется в 5 научных статьях (всего в 5 статьях)
Статьи, опубликованные в английской версии журнала
Non-Lie Top Tunneling and Quantum Bilocalization in Planar Penning Trap
M. V. Karasev, E. M. Novikova, E. V. Vybornyi
Аннотация:
We describe how a top-like quantum Hamiltonian over a non-Lie algebra appears
in the model of the planar Penning trap under the breaking of its axial symmetry
(inclination of the
magnetic field) and tuning parameters (electric voltage, magnetic field strength
and inclination angle) at double resonance.
For eigenvalues of the quantum non-Lie top,
under a specific variation of the voltage on the trap electrode, there exists an avoided
crossing effect and a corresponding effect of bilocalization of quantum states on
pairs of closed trajectories belonging to common energy levels.
This quantum tunneling
happens on the symplectic leaves of the symmetry algebra, and hence it generates
a tunneling of quantum states of the electron between the 3D-tori in the whole 6D-phase
space.
We present a geometric formula for the leading term of asymptotics of the
tunnel energy-splitting in terms of symplectic area of membranes bounded by invariantly
defined instantons.
Ключевые слова:
symmetry breaking, double-resonance, symplectic instanton, Kirillov form, tunnel splitting.
Поступило: 30.09.2016
Образец цитирования:
M. V. Karasev, E. M. Novikova, E. V. Vybornyi, “Non-Lie Top Tunneling and Quantum Bilocalization in Planar Penning Trap”, Math. Notes, 100:6 (2016), 807–819
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