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Эта публикация цитируется в 8 научных статьях (всего в 8 статьях)
New n-type semiconductor material based on styryl fullerene for organic field-effect transistors
A. R. Tuktarova, N. M. Chobanova, Z. R. Sadretdinovaa, R. B. Salikhovb, I. N. Mullagalievb, T. R. Salikhovb, U. M. Dzhemileva
a Institute of Petrochemistry and Catalysis, Ufa Federal Research Centre of the Russian Academy of Sciences, Ufa, Russian Federation
b Institute of Physics and Technology, Bashkir State University, Ufa, Russian Federation
Аннотация:
Organic field-effect transistors with styryl fullerene as a semiconductor
layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 ± 10% cm2 V–1 s–1, whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 ± 10% cm2 V–1 s–1).
Ключевые слова:
[60]fullerene, styryl fullerene, PCBM, organic semiconductor, organic field-effect transistor, electron mobility.
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/mendc1008
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