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Письма в Журнал экспериментальной и теоретической физики, 2010, том 91, выпуск 6, страницы 301–305
(Mi jetpl674)
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Эта публикация цитируется в 15 научных статьях (всего в 15 статьях)
КОНДЕНСИРОВАННЫЕ СРЕДЫ
Atomic structure of Ge quantum dots on the Si(001) surface
L. V. Arapkina, V. A. Yuryev A. M. Prokhorov General Physics Institute RAS
Аннотация:
In situ morphological investigation of the \{105\} faceted Ge islands on the Si(001) surface (hut clusters) have been carried out using an ultra high vacuum instrument integrating a high resolution scanning tunnelling microscope and a molecular beam epitaxy vessel. Both species of hut clusters–pyramids and wedges–were found to have the same structure of the \{105\} facets which was visualized. Structures of vertexes of the pyramidal clusters and ridges of the wedge-shaped clusters were revealed as well and found to be different. This allowed us to propose a crystallographic model of the \{105\} facets as well as models of the atomic structure of both species of the hut clusters. An inference is made that transitions between the cluster shapes are impossible.
Поступила в редакцию: 03.02.2010
Образец цитирования:
L. V. Arapkina, V. A. Yuryev, “Atomic structure of Ge quantum dots on the Si(001) surface”, Письма в ЖЭТФ, 91:6 (2010), 301–305; JETP Letters, 91:6 (2010), 281–285
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl674 https://www.mathnet.ru/rus/jetpl/v91/i6/p301
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Страница аннотации: | 211 | PDF полного текста: | 74 | Список литературы: | 60 |
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