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Письма в Журнал экспериментальной и теоретической физики, 2009, том 90, выпуск 10, страницы 756–760
(Mi jetpl592)
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Эта публикация цитируется в 10 научных статьях (всего в 10 статьях)
КОНДЕНСИРОВАННЫЕ СРЕДЫ
Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment
A. N. Poddubnyia, S. V. Goupalovb, V. I. Kozuba, I. N. Yassievicha a Ioffe Physico-Technical Institute, Russian Academy of Sciences
b Department of Physics, Jackson State University, Jackson, Mississippi
39217, USA
Аннотация:
We propose a Fröhlich-type electron-phonon interaction mechanism for carriers confined in a non-polar quantum dot surrounded by an amorphous polar environment. Carrier transitions under this mechanism are due to their interaction with the oscillating electric field induced by the local vibrations in the surrounding amorphous medium. We estimate the corresponding energy relaxation rate for electrons in Si nanocrystals embedded in a SiO$_2$ matrix as an example. When the nanocrystal diameter is larger than $4$ nm then the gaps between the electron energy levels of size quantization are narrow enough to allow for transitions accompanied by emission of a single local phonon having the energy about 140 meV. In such Si/SiO$_2$ nanocrystals the relaxation time is in nanosecond range.
Поступила в редакцию: 22.10.2009
Образец цитирования:
A. N. Poddubnyi, S. V. Goupalov, V. I. Kozub, I. N. Yassievich, “Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment”, Письма в ЖЭТФ, 90:10 (2009), 756–760; JETP Letters, 90:10 (2009), 683–687
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl592 https://www.mathnet.ru/rus/jetpl/v90/i10/p756
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