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КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Modulation of band gap by normal strain and an applied electric field in SiC-based heterostructures
M. Luoa, Y. E. Xuab, Y. X. Songc a Department of Electronic Engineering, Shang Hai Jian Qiao University, 201306 Shanghai, China
b School of Microelectronic of Fudan University, 200433 Shanghai, China
c Key Laboratory of Polar Materials and Devices, East China Normal University, 200241 Shanghai, China
Поступила в редакцию: 24.10.2016 Исправленный вариант: 08.12.2016
Образец цитирования:
M. Luo, Y. E. Xu, Y. X. Song, “Modulation of band gap by normal strain and an applied electric field in SiC-based heterostructures”, Письма в ЖЭТФ, 105:2 (2017), 105; JETP Letters, 105:2 (2017), 114–118
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl5171 https://www.mathnet.ru/rus/jetpl/v105/i2/p105
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