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Эта публикация цитируется в 2 научных статьях (всего в 2 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
A. Kononova, S. V. Egorova, V. A. Kostareva, B. R. Semyaginb, V. V. Preobrazhenskiib, M. A. Putyatob, E. A. Emelyanovb, E. V. Deviatova a Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
b Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
Аннотация:
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro-(at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion.
The article is published in the original.
Поступила в редакцию: 26.05.2016
Образец цитирования:
A. Kononov, S. V. Egorov, V. A. Kostarev, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov, “Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion”, Письма в ЖЭТФ, 104:1 (2016), 24–25; JETP Letters, 104:1 (2016), 26–31
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl5002 https://www.mathnet.ru/rus/jetpl/v104/i1/p24
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