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Эта публикация цитируется в 7 научных статьях (всего в 7 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures
V. N. Men'shovab, V. V. Tugushevcba, E. V. Chulkovdebfg a National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia
b Tomsk State University, 634050 Tomsk, Russia
c Prokhorov General Physics Institute of the RAS, 119991 Moscow, Russia
d Centro de Física de Materiales CFM-MPC, 20080 San Sebastián, Basque Country, Spain
e St. Petersburg State University, 198504 St. Petersburg, Russia
f Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián, Basque Country, Spain
g Departamento de Física de Materiales, Facultad de Químicas, UPV/EHU, 20080 San Sebastián, Basque Country, Spain
Аннотация:
In the framework of an effective functional approach based on the $\mathbf{k}\cdot\mathbf{p}$ method, we study the combined effect of an interface potential and a thickness of a three-dimensional (3D) topological insulator (TI) thin film on the spin Hall conductivity in layered heterostructures comprising TI and normal insulator (NI) materials. We derive an effective two-dimensional (2D) Hamiltonian of a 3D TI thin film sandwiched between two NI slabs and define the applicability limits of approximations used. The energy gap and mass dispersion in the 2D Hamiltonian, originated from the hybridization between TI/NI interfacial bound electron states at the opposite boundaries of a TI film, are demonstrated to change sign with the TI film thickness and the interface potential strength. Finally, we argue that the spin Hall conductivity can efficiently be tuned varying the interface potential characteristics and TI film thickness.
Поступила в редакцию: 14.10.2015 Исправленный вариант: 27.10.2015
Образец цитирования:
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures”, Письма в ЖЭТФ, 102:11 (2015), 864–869; JETP Letters, 102:11 (2015), 754–759
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl4808 https://www.mathnet.ru/rus/jetpl/v102/i11/p864
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Страница аннотации: | 238 | PDF полного текста: | 14 | Список литературы: | 30 | Первая страница: | 4 |
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