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Эта публикация цитируется в 7 научных статьях (всего в 7 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Suppression of hole relaxation in small-sized Ge/Si quantum dots
A. I. Yakimovab, V. V. Kirienkoa, A. A. Bloshkinac, V. A. Armbristera, A. V. Dvurechenskiica a Rzhanov Institute of Semiconductor Physics SB of the RAS, 630090 Novosibirsk, Russia
b Tomsk State University, 634050 Tomsk, Russia
c Novosibirsk State University, 630090 Novosibirsk, Russia
Аннотация:
We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period $p$-type Ge/Si quantum dot heterostructures. The dot dimensions is varied by changing the Ge coverage during molecular beam epitaxy of Ge/Si(001) system in the Stranski–Krastanov growth mode while keeping the deposition temperature to be the same. A device with smaller dots is found to exhibit a lower capture probability and a higher photoconductive gain and photoresponse. The integrated responsivity in the mid-wave atmospheric window ($\lambda =(3{-}5)\,\mu$m) is improved by a factor of about $8$ when the average in-plane dot dimension changes from $18$ to $11$ nm. The decrease of the dot size is expected to reduce the carrier relaxation rate due to phonon bottleneck by providing strong zero-dimensional quantum mechanical confinement.
Поступила в редакцию: 10.09.2015
Образец цитирования:
A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister, A. V. Dvurechenskii, “Suppression of hole relaxation in small-sized Ge/Si quantum dots”, Письма в ЖЭТФ, 102:9 (2015), 678–682; JETP Letters, 102:9 (2015), 594–598
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl4778 https://www.mathnet.ru/rus/jetpl/v102/i9/p678
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