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Письма в Журнал экспериментальной и теоретической физики, 2008, том 87, выпуск 4, страницы 247–251
(Mi jetpl47)
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Эта публикация цитируется в 20 научных статьях (всего в 20 статьях)
КОНДЕНСИРОВАННЫЕ СРЕДЫ
Structure and peculiarities of the $(8\times n)$-type Si(001) surface prepared in a molecular beam epitaxy chamber: a scanning tunnelling microscopy study
L. V. Arapkina, V. M. Shevlyuga, V. A. Yuryev Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia
Аннотация:
A clean Si(001) surface thermally purified in the ultra-high-vacuum molecular beam epitaxy chamber has been investigated by means of the scanning tunnelling microscopy. Morphological peculiarities of the Si(001) surface have been explored in detail. A classification of surface structure elements has been carried out, the dimensions of the elements have been measured, and relative heights of the surface relief have been determined.
A reconstruction of the Si(001) surface prepared in the molecular beam epitaxy chamber has been found to be $(8\times n)$. A model of the Si$(001)-(8\times n)$ surface structure is proposed.
Поступила в редакцию: 02.01.2008 Исправленный вариант: 15.01.2008
Образец цитирования:
L. V. Arapkina, V. M. Shevlyuga, V. A. Yuryev, “Structure and peculiarities of the $(8\times n)$-type Si(001) surface prepared in a molecular beam epitaxy chamber: a scanning tunnelling microscopy study”, Письма в ЖЭТФ, 87:4 (2008), 247–251; JETP Letters, 87:4 (2008), 215–219
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl47 https://www.mathnet.ru/rus/jetpl/v87/i4/p247
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