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Эта публикация цитируется в 4 научных статьях (всего в 4 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Conductance through chains of Ge/Si quantum dots: crossover from
one-dimensional to quasi-one-dimensional hopping
N. P. Stepinaa, V. V. Valkovskiiba, Yu. M. Гальперинcd, Zh. V. Smaginaa, A. V. Dvurechenskiiab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Department of Physics and Center for Advanced Materials & Nanotechnology, University of Oslo
d Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
Аннотация:
Parallel chains of germanium quantum dots were grown on a patterned
silicon (100) substrate prepared by the combination of nanoimprint lithography
and ion irradiation. Strong anisotropy of the conductance between the
direction of the chains and the perpendicular one was observed; the
current-voltage curves being essentially superlinear.
At low bias voltage dependence of
the conductance obeys the Arrhenius law indicating one-dimensional (1D) hopping.
With increase of the bias this dependence crosses over to
$G\propto \exp [-(T_0/T)^{1/2}]$ explained by a quasi-1D transport involving hopping between
nearest neighboring chains.
Поступила в редакцию: 10.11.2014 Исправленный вариант: 17.11.2014
Образец цитирования:
N. P. Stepina, V. V. Valkovskii, Yu. M. Гальперин, Zh. V. Smagina, A. V. Dvurechenskii, “Conductance through chains of Ge/Si quantum dots: crossover from
one-dimensional to quasi-one-dimensional hopping”, Письма в ЖЭТФ, 101:1 (2015), 24–28; JETP Letters, 101:1 (2015), 22–26
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl4513 https://www.mathnet.ru/rus/jetpl/v101/i1/p24
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