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Эта публикация цитируется в 10 научных статьях (всего в 10 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Effect of surface defects and few-atomic steps on the local density of
states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$
A. Yu. Dmitrievab, N. I. Fedotovab, V. F. Nasretdinovab, S. V. Zaitsev-Zotovba a Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Аннотация:
The results of ultra-high vacuum low-temperature scanning-tunneling microscopy
(STM) and spectroscopy (STS) of atomically clean (111) surface of the
topological insulator Bi$_2$Se$_3$ are presented. We observed several types of
new subsurface defects whose location and charge correspond to $p$-type conduction
of grown crystals. The sign of the thermoelectric effect also indicates $p$-type
conduction. STM and STS measurements demonstrate that the chemical potential is
always located inside the bulk band gap.
We also observed changes in the local density of states in the vicinity of the
quintuple layer steps at the studied surface. This changes correspond either to
the shift of the Dirac cone position or to the shift of the chemical potential
near the step edge.
Поступила в редакцию: 14.08.2014
Образец цитирования:
A. Yu. Dmitriev, N. I. Fedotov, V. F. Nasretdinova, S. V. Zaitsev-Zotov, “Effect of surface defects and few-atomic steps on the local density of
states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$”, Письма в ЖЭТФ, 100:6 (2014), 442–446; JETP Letters, 100:6 (2014), 398–402
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl4128 https://www.mathnet.ru/rus/jetpl/v100/i6/p442
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Страница аннотации: | 214 | PDF полного текста: | 51 | Список литературы: | 36 | Первая страница: | 15 |
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