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Эта публикация цитируется в 6 научных статьях (всего в 6 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Investigations of local electronic transport in InAs nanowires
by scanning gate microscopy at helium temperatures
A. A. Zhukova, Ch. Volkbc, A. Windenbc, H. Hardtdegencb, Th. Schäpersdb a Institute of Solid State Physics, Russian Academy of Sciences
b JARA-Fundamentals of Future Information Technology, Forschungszentrum Julich
c Peter Grünberg Institute, Jülich
d II. Physikalisches Institut, RWTH Aachen University
Аннотация:
In the current paper a set of experiments dedicated to investigations of
local electronic transport in undoped InAs nanowires at helium temperatures
in the presence of a charged atomic-force microscope tip is presented. Both
nanowires without defects and with internal tunneling barriers were studied.
The measurements were performed at various carrier concentrations in the
systems and opacity of contact-to-wire interfaces. The regime of Coulomb
blockade is investigated in detail including negative differential
conductivity of the whole system. The situation with open contacts with one
tunneling barrier and undivided wire is also addressed. Special attention is
devoted to recently observed quasi-periodic standing waves.
Поступила в редакцию: 29.05.2014
Образец цитирования:
A. A. Zhukov, Ch. Volk, A. Winden, H. Hardtdegen, Th. Schäpers, “Investigations of local electronic transport in InAs nanowires
by scanning gate microscopy at helium temperatures”, Письма в ЖЭТФ, 100:1 (2014), 34–41; JETP Letters, 100:1 (2014), 32–38
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3773 https://www.mathnet.ru/rus/jetpl/v100/i1/p34
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