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Эта публикация цитируется в 20 научных статьях (всего в 20 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Metal-insulator transition in a HgTe quantum well under hydrostatic pressure
E. B. Olshanetskiia, Z. D. Kvonba, Ya. A. Gerasimenkoc, V. A. Prudkoglyadc, V. M. Pudalovcd, N. N. Mikhailova, S. A. Dvoretskiia a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
d Moscow Institute of Physics and Technology
Аннотация:
The 2D semimetal in a $20$ nm (100) HgTe quantum well is
characterized by a comparatively low overlap between the
conduction and the valence bands induced by lattice mismatch. In
the present paper we report the results of transport measurements
in this quantum well under hydrostatic pressure of $14.4$ kbar. By
applying pressure we have further reduced the band overlap,
thereby creating favorable conditions for the formation of the
excitonic insulator state.
As a result, we observed that the metallic-like temperature
dependence of the conductivity at lowering temperature sharply
changes to the activated behavior, signalling the onset of an
excitonic insulator regime.
Поступила в редакцию: 25.11.2013
Образец цитирования:
E. B. Olshanetskii, Z. D. Kvon, Ya. A. Gerasimenko, V. A. Prudkoglyad, V. M. Pudalov, N. N. Mikhailov, S. A. Dvoretskii, “Metal-insulator transition in a HgTe quantum well under hydrostatic pressure”, Письма в ЖЭТФ, 98:12 (2013), 947–951; JETP Letters, 98:12 (2013), 843–847
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3620 https://www.mathnet.ru/rus/jetpl/v98/i12/p947
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