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КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Ab initio study of surface electronic structure of phosphorus
donor imputiry on Ge(111)-(2$\times$1) surface
S. V. Savinova, A. I. Oreshkina, S. I. Oreshkinb a M. V. Lomonosov Moscow State University, Faculty of Physics
b P. K. Sternberg Astronomical Institute, M. V. Lomonosov Moscow State University
Аннотация:
We present the results of numerical modeling of Ge(111)-(2$\times$1) surface
electronic properties in vicinity of P donor impurity atom near the surface. We
show, that despite of well established bulk donor impurity energy level position
at the very bottom of conduction band, surface donor impurity might produce
energy level below Fermi energy, depending on impurity atom local
environment. It was demonstrated, that impurity, located in subsurface atomic
layers, is visible in STM experiment. The quasi-1D character of impurity image,
observed in STM experiments, is confirmed by our computer simulations.
Поступила в редакцию: 28.01.2013
Образец цитирования:
S. V. Savinov, A. I. Oreshkin, S. I. Oreshkin, “Ab initio study of surface electronic structure of phosphorus
donor imputiry on Ge(111)-(2$\times$1) surface”, Письма в ЖЭТФ, 97:7 (2013), 458–464; JETP Letters, 97:7 (2013), 393–399
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3391 https://www.mathnet.ru/rus/jetpl/v97/i7/p458
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Страница аннотации: | 166 | PDF полного текста: | 49 | Список литературы: | 34 | Первая страница: | 1 |
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