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Эта публикация цитируется в 16 научных статьях (всего в 16 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Interface induced states at the boundary between a $3D$
topological insulator and a normal insulator
V. N. Men'shova, V. V. Tugusheva, E. V. Chulkovbc a National Research Centre "Kurchatov Institute"
b Tomsk State University
c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country
Аннотация:
We show that, when a three-dimensional ($3D$) narrow-gap
semiconductor with inverted band gap (“topological insulator”, TI) is
attached to a $3D$ wide-gap semiconductor with non-inverted band gap
(“normal insulator”, NI), two types of bound electron states having
different spatial distributions and spin textures arise at the TI/NI
interface. Namely, the gapless (“topological”) bound state can be
accompanied by the emergence of the gapped (“ordinary”) bound state. We
describe these states in the framework of the envelope function method using
a variational approach for the energy functional; their existence hinges on
the ambivalent character of the constraint for the envelope functions that
correspond to the “open” or “natural” boundary conditions at the
interface. The properties of the ordinary state strongly depend on the
effective interface potential, while the topological state is insensitive to
the interface potential variation.
Поступила в редакцию: 29.01.2013
Образец цитирования:
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Interface induced states at the boundary between a $3D$
topological insulator and a normal insulator”, Письма в ЖЭТФ, 97:5 (2013), 297–303; JETP Letters, 97:5 (2013), 258–264
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3367 https://www.mathnet.ru/rus/jetpl/v97/i5/p297
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