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Письма в Журнал экспериментальной и теоретической физики, 2012, том 96, выпуск 11, страницы 799–803
(Mi jetpl3298)
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Эта публикация цитируется в 18 научных статьях (всего в 18 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Efficient step-mediated intercalation of silver atoms deposited on the
Bi$_{2}$Se$_{3}$ surface
M. M. Otrokova, S. D. Borisovaba, V. Chisc, M. G. Vergniorycd, S. V. Eremeevab, V. M. Kuznetsova, E. V. Chulkovce a Tomsk State University
b Institute of Strength Physics and Materials Science, Siberian Branch of the Russian Academy of Sciences
c Donostia International Physics Center
d Max-Planck-Institut f\"ur Mikrostrukturphysik
e Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country
Аннотация:
The intercalation of silver atoms into the van der Waals gap of the
prototypical three-dimensional topological insulator Bi$_{2}$Se$_{3}$
is studied by means of ab initio total-energy calculations.
Two possible intercalation mechanisms are examined: penetration from
the terrace under the step and penetration via interstitials and/or
vacancies of the surface quintuple layer block. It is shown that the
former mechanism is strongly preferred over the latter one due to
significant energy gain appearing at the step. According to performed
estimations, the room temperature diffusion length of silver atoms
reaches ten microns within a couple of minutes both on the surface
and within the van der Waals gap, which essentially exceeds a typical
distance between steps. These results shed light on the mechanism of
intercalation of metal atoms deposited on the Bi$_{2}$Se$_{3}$
surface.
Поступила в редакцию: 02.10.2012
Образец цитирования:
M. M. Otrokov, S. D. Borisova, V. Chis, M. G. Vergniory, S. V. Eremeev, V. M. Kuznetsov, E. V. Chulkov, “Efficient step-mediated intercalation of silver atoms deposited on the
Bi$_{2}$Se$_{3}$ surface”, Письма в ЖЭТФ, 96:11 (2012), 799–803; JETP Letters, 96:11 (2012), 714–718
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3298 https://www.mathnet.ru/rus/jetpl/v96/i11/p799
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Страница аннотации: | 273 | PDF полного текста: | 81 | Список литературы: | 43 | Первая страница: | 6 |
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