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Письма в Журнал экспериментальной и теоретической физики, 2012, том 96, выпуск 7, страницы 492–498
(Mi jetpl3245)
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Эта публикация цитируется в 10 научных статьях (всего в 10 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Bound states induced by a ferromagnetic delta-layer inserted into
a three-dimensional topological insulator
V. N. Men'shovab, V. V. Tugushevba, E. V. Chulkovc a Russian Research Centre "Kurchatov Institute", Moscow
b Tomsk State University
c Departamento de Física de Materiales, Facultad de Quimica, UPV/EHU, San Sebastian, Basque Country
Аннотация:
We report on theoretical study of the bound electron states
induced by a ferromagnetic delta-layer embedded into a narrow-band-gap
semiconductor of the Bi$_2$Se$_3$-type which is a three-dimensional
topological insulator with large spin-orbit coupling. We make use of an
effective Hamiltonian taking into account the inverted band structure of the
semiconductor host at the $\Gamma $ point and describe the properties of the
in-gap bound states: energy spectrum, characteristic length and spin
polarization. We highlight a role of these states for a magnetic proximity
effect in digital magnetic heterostructures based on the Bi$_2$Se$_3$-type
semiconductors.
Поступила в редакцию: 17.08.2012
Образец цитирования:
V. N. Men'shov, V. V. Tugushev, E. V. Chulkov, “Bound states induced by a ferromagnetic delta-layer inserted into
a three-dimensional topological insulator”, Письма в ЖЭТФ, 96:7 (2012), 492–498; JETP Letters, 96:7 (2012), 445–451
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl3245 https://www.mathnet.ru/rus/jetpl/v96/i7/p492
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Страница аннотации: | 181 | PDF полного текста: | 44 | Список литературы: | 25 | Первая страница: | 2 |
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