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Письма в Журнал экспериментальной и теоретической физики, 2012, том 95, выпуск 8, страницы 472–476
(Mi jetpl2539)
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Эта публикация цитируется в 9 научных статьях (всего в 9 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Anomalous temperature dependence of photoluminescence in
GeO$_{x}$
D. V. Marinab, V. A. Volodinab, H. Rinnertc, M. Vergnatc a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
b Novosibirsk State University
c Institut Jean Lamour UMR CNRS 7198 - Nancy Universit\'{e} - UPV Metz, Facult\'{e} des Sciences et Technologies
Аннотация:
The optical properties of GeO$_x$ film and GeO$_x$/SiO$_2$ multilayer heterostructures (with
thickness of GeO$_x$ layers down to 1 nm) were studied with the use of Raman scattering and IR
spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature
dependence of photoluminescence. The observed photoluminescence is related to defect
(dangling bonds) in GeO$_x$ and interface defects for the case of GeO$_x$/SiO$_2$ multilayer
heterostructures. From analysis of temperature dependence of PL intensity, it was found that rate
of nonradiative transitions in GeO$_x$ film has Berthelot type, but anomalous deviations from
Berthelot type temperature dependence were observed in temperature dependences of PL
intensities for GeO$_x$/SiO$_2$ multilayer heterostructures.
Поступила в редакцию: 15.03.2012
Образец цитирования:
D. V. Marin, V. A. Volodin, H. Rinnert, M. Vergnat, “Anomalous temperature dependence of photoluminescence in
GeO$_{x}$”, Письма в ЖЭТФ, 95:8 (2012), 472–476; JETP Letters, 95:8 (2012), 424–428
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl2539 https://www.mathnet.ru/rus/jetpl/v95/i8/p472
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