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Письма в Журнал экспериментальной и теоретической физики, 2011, том 94, выпуск 12, страницы 934–938
(Mi jetpl2405)
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Эта публикация цитируется в 4 научных статьях (всего в 4 статьях)
КОНДЕНСИРОВАННОЕ СОСТОЯНИЕ
Influence of electron localization on the spin dephasing anisotropy
in bias GaAs/AlGaAs coupled quantum wells
A. V. Sekretenko, A. V. Larionov Institute of Solid State Physics, Russian Academy of Sciences
Аннотация:
Electron spin dephasing anisotropy is studied in
GaAs/AlGaAs coupled quantum wells by means of a time-resolved Kerr
rotation technique. It is found that the spin dephasing rate is
strongly dependent on magnetic field and is significantly
anisotropic in the quantum well plane. The presented theoretical
model describes the experimental results by taking into account
both the electron g-factor spreading and the irreversible electron
spin relaxation which are caused by the electron localisation. The
suggested theoretical description is in a good agreement with
experimental data.
Поступила в редакцию: 17.11.2011
Образец цитирования:
A. V. Sekretenko, A. V. Larionov, “Influence of electron localization on the spin dephasing anisotropy
in bias GaAs/AlGaAs coupled quantum wells”, Письма в ЖЭТФ, 94:12 (2011), 934–938; JETP Letters, 94:12 (2011), 853–857
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl2405 https://www.mathnet.ru/rus/jetpl/v94/i12/p934
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Страница аннотации: | 188 | PDF полного текста: | 58 | Список литературы: | 18 |
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