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Письма в Журнал экспериментальной и теоретической физики, 2005, том 82, выпуск 6, страницы 412–417
(Mi jetpl1568)
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ПО ИТОГАМ ПРОЕКТОВ РОССИЙСКОГО ФОНДА ФУНДАМЕНТАЛЬНЫХ ИССЛЕДОВАНИЙ
Quenched Disorder Effects in Electron Transport in Si Inversion Layers in the Dilute Regime
V. M. Pudalova, M. E. Gershensonb, N. N. Klimovbc, H. Kojimab a P. N. Lebedev Physical Institute RAS
b Rutgers, The State University of New Jersey, Department of Physics & Astronomy
c P. N. Lebedev Physics Research Center
Аннотация:
In order to reveal the effects of disorder in the vicinity of the apparent metal-insulator transition in 2D, we studied the electron transport in the same Si- device after cooling it down to 4 K at different fixed values of the gate voltage $V^\mathrm{cool}$. Different $V^\mathrm{cool}$ did not modify significantly either the momentum relaxation rate or the strength of electron-electron interactions. However, the temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields, in the vicinity of the 2D metal-insulator transition, carry a strong imprint of the quenched disorder determined by $V^\mathrm{cool}$. This demonstrates that the observed transition between metallic and insulating regimes, besides universal effects of electron-electron interaction, depends on a sample-specific localized states (disorder). We report an evidence for a weak exchange in electrons between the reservoirs of extended and resonant localized states which occur at low densities. The strong cool-down dependent variations of $\rho(T)$, we believe, are evidence for developing spatially inhomogeneous state in the critical regime.
Поступила в редакцию: 21.07.2005
Образец цитирования:
V. M. Pudalov, M. E. Gershenson, N. N. Klimov, H. Kojima, “Quenched Disorder Effects in Electron Transport in Si Inversion Layers in the Dilute Regime”, Письма в ЖЭТФ, 82:6 (2005), 412–417; JETP Letters, 82:6 (2005), 371–376
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl1568 https://www.mathnet.ru/rus/jetpl/v82/i6/p412
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