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Письма в Журнал экспериментальной и теоретической физики, 2010, том 92, выпуск 5, страницы 346–350
(Mi jetpl1404)
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Эта публикация цитируется в 12 научных статьях (всего в 12 статьях)
КОНДЕНСИРОВАННЫЕ СРЕДЫ
Phase transition between $(2\times1)$ and $c(8\times8)$ reconstructions observed on the Si(001) surface around $600^{\circ}$C
L. V. Arapkina, V. A. Yuryev, V. M. Shevlyuga, K. V. Chizh A. M. Prokhorov General Physics Institute RAS,
Moscow, Russia
Аннотация:
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution scanning tunnelling microscopy (STM). A transition between $(2\times1)$ and $(4\times4)$ RHEED patterns was observed. The $(4\times4)$ pattern arose at $T\lesssim 600^{\circ}$C during sample posttreatment cooling. The reconstruction was observed to be reversible. The $c(8\times8)$ structure was revealed by STM at room temperature on the same samples. The $(4\times 4)$ patterns have been evidenced to be a manifestation of the $c(8\times8)$ surface structure in RHEED. The phase transition appearance has been found to depend on thermal treatment conditions and sample cooling rate.
Поступила в редакцию: 06.07.2010
Образец цитирования:
L. V. Arapkina, V. A. Yuryev, V. M. Shevlyuga, K. V. Chizh, “Phase transition between $(2\times1)$ and $c(8\times8)$ reconstructions observed on the Si(001) surface around $600^{\circ}$C”, Письма в ЖЭТФ, 92:5 (2010), 346–350; JETP Letters, 92:5 (2010), 310–314
Образцы ссылок на эту страницу:
https://www.mathnet.ru/rus/jetpl1404 https://www.mathnet.ru/rus/jetpl/v92/i5/p346
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Страница аннотации: | 173 | PDF полного текста: | 51 | Список литературы: | 45 |
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