Photoconductivities of nanocrystalline vanadium pentoxide thin film grown by plasma RF magnetron sputtering at the different condition of deposition

In this study, the fabrication and characterization of a metal–semiconductor–metal (MSM) visible photodetector based on V$_{2}$O$_{5}$ were investigated. The V$_{2}$O$_{5}$ thin film was synthesized on n-type Si (100) as substrate by plasma RF-sputtering. The photoconductivity of the nanocrystalline vanadium pentoxide (V$_{2}$O$_{5}$|Si) was investigated at the different conditions of deposition (i. e. RF-sputtering power, pressure, and substrate temperature). The photoconductivity measurement of this work was performed in the darkness and under illumination, with applied voltage from a range of 0.1–10 V and illumination intensity 9.8 mW/cm$^{2}$. I–V characteristics under illumination showed that the films prepared from V$_{2}$O$_{5}$ on the basis of n-Si have good efficiency and the best is at power 150 W, pressure 0.03 Torr, and temperature 473 K. The fabricated photoconductive detector showed the spectral response $(R_{\lambda})$ value of 0.0783 AW$^{-1}$, quantum efficiency 18.04%, spectral detectivity $D^{*}$ = 6.984 $\cdot$ 10$^{9}$ cm $\cdot$ Hz$^{1/2}$ $\cdot$ W$^{-1}$ at wavelength 600 nm, and low spectral responsivity in the UV region.