- L. L. Lev, V. N. Strocov, Y. Y. Lebedinskii, T. Schmitt, A. V. Zenkevich, “Band bending and
k
-resolved band offsets at the
HfO2/n+(p+)Si
interfaces explored with synchrotron-radiation ARPES/XPS”, Phys. Rev. Materials, 6, no. 8, 2022, 084605
- William B. Miller, “A scale-free universal relational information matrix (N-space) reconciles the information problem: N-space as the fabric of reality”, Communicative & Integrative Biology, 16, no. 1, 2023, 2193006
- Jiao Chen, Wenlong Bao, Zhaoliang Wang, Ke Xu, Dawei Tang, “Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN”, Phys. Chem. Chem. Phys., 26, no. 10, 2024, 8504
- Yunxu Chen, Jinxin Liu, Keli Liu, Jingjing Si, Yiran Ding, Linyang Li, Tianrui Lv, Jianping Liu, Lei Fu, “GaN in different dimensionalities: Properties, synthesis, and applications”, Materials Science and Engineering: R: Reports, 138, 2019, 60
- Shuo Zhang, Bei Ma, Xingyu Zhou, Qilin Hua, Jian Gong, Ting Liu, Xiao Cui, Jiyuan Zhu, Wenbin Guo, Liang Jing, Weiguo Hu, Zhong Lin Wang, “Strain-controlled power devices as inspired by human reflex”, Nat Commun, 11, no. 1, 2020, 326
- Zahir Muhammad, Yan Wang, Yue Zhang, Pierre Vallobra, Shouzhong Peng, Songyan Yu, Ziyu Lv, Houyi Cheng, Weisheng Zhao, “Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors”, Adv Materials Technologies, 8, no. 2, 2023, 2200539
- A. M. Lebedev, K. A. Menshikov, V. G. Nazin, V. G. Stankevich, M. B. Tsetlin, R. G. Chumakov, “NanoPES Photoelectron Beamline of the Kurchatov Synchrotron Radiation Source”, J. Surf. Investig., 15, no. 5, 2021, 1039
- Yuyang Wu, Yi Zhang, Yunhao Zhao, Chenyuan Cai, Yahui Zhang, Yu Zhang, Chongyun Liang, Yingqiang Xu, Zhichuan Niu, Yi Shi, Renchao Che, “Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers”, ACS Appl. Mater. Interfaces, 13, no. 23, 2021, 27262
- A. A. Andreev, Yu. V. Grishchenko, I. S. Ezubchenko, M. Ya. Chernykh, E. M. Kolobkova, I. O. Maiboroda, I. A. Chernykh, M. L. Zanaveskin, “Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates”, Tech. Phys. Lett., 45, no. 2, 2019, 173
- I. O. Mayboroda, E. M. Kolobkova, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin, N. K. Chumakov, “Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow”, Crystallogr. Rep., 66, no. 3, 2021, 520