|
|
|
Публикации в базе данных Math-Net.Ru |
Цитирования |
|
2017 |
| 1. |
A. Nasri, A. Boubaker, W. Khaldi, B. Hafsi, A. Kalboussi, “Single electron transistor: energy-level broadening effect and thermionic contribution”, Физика и техника полупроводников, 51:12 (2017), 1711–1715   ; Semiconductors, 51:12 (2017), 1656–1660 |
| 2. |
Slah Hlali, Neila Hizem, Adel Kalboussi, “Charge density at the Al$_{2}$O$_{3}$/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions”, Физика и техника полупроводников, 51:12 (2017), 1682–1689 ; Semiconductors, 51:12 (2017), 1625–1633 |
|
2016 |
| 3. |
S. Chatbouri, M. Troudi, N. Sghaier, A. Kalboussi, V. Aimez, D. Drouin, A. Souifi, “Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector”, Физика и техника полупроводников, 50:9 (2016), 1185–1189 ; Semiconductors, 50:9 (2016), 1163–1167 |
4
|
|
Обратная связь: