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Публикации в базе данных Math-Net.Ru |
Цитирования |
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2021 |
1. |
X.-M. Zhang, C.-L. Yan, G.-H. Yu, C.-H. Zeng, T.-Y. Sun, Z. Xing, Y.-Q. Wang, J.-H. Yang, B.-S. Zhang, “High-quality etching of GaN materials with extremely slow rate and low damage”, Физика и техника полупроводников, 55:3 (2021), 289 ; Semiconductors, 55:3 (2021), 387–393 |
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