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Publications in Math-Net.Ru |
Citations |
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1996 |
| 1. |
V. G. Mokerov, Yu. V. Fedorov, A. V. Guk, Yu. V. Khabarov, “Optical properties of the two-dimentional electron gas in the $\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$ heterostructures”, Dokl. Akad. Nauk, 348:5 (1996), 608–610  |
| 2. |
Yu. V. Gulyaev, V. G. Mokerov, A. V. Guk, Yu. V. Fedorov, Yu. V. Khabarov, “Photoluminescence of the three-dimensional and two-dimensional carries in the
$\mathrm{N}$–$\mathrm{AlGaAs}/\mathrm{GaAs}$-heterostructures”, Dokl. Akad. Nauk, 348:1 (1996), 42–44 |
| 3. |
V. I. Trofimov, B. K. Medvedev, V. G. Mokerov, A. G. Shumyankov, “Rate equations for layer-by-layer epitaxial growth”, Dokl. Akad. Nauk, 347:4 (1996), 469–471 |
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1995 |
| 4. |
V. I. Trofimov, B. K. Medvedev, V. G. Mokerov, A. G. Shumyankov, “Extended model of the molecular beam epitaxial growth kinetics on vicinal surface”, Dokl. Akad. Nauk, 344:1 (1995), 40–42 |
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1993 |
| 5. |
V. G. Mokerov, B. K. Medvedev, I. N. Kotel’nikov, Yu. V. Fedorov, “Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping”, Dokl. Akad. Nauk, 332:5 (1993), 575–577 |
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1992 |
| 6. |
A. S. Ignat'ev, V. E. Kaminskii, V. B. Kopylov, V. G. Mokerov, G. 3. Nemtsev, S. S. Shmelev, V. S. Shubin, “Влияние спейсер-слоев на вольт-амперную характеристику
туннельно-резонансных диодов”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1795–1800 |
| 7. |
I. M. Grodnenskiĭ, Y. M. Dikaev, A. S. Rudenko, K. V. Starostin, M. L. Yassen, B. K. Medvedev, V. G. Mokerov, Yu. V. Slepnev, “Множественная полосковая структура с квазиодномерным электронным
энергетическим спектром”, Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1521–1528 |
| 8. |
I. N. Kotel’nikov, V. A. Kokin, B. K. Medvedev, V. G. Mokerov, Y. A. Rzhanov, S. P. Anokhina, “Характеристика и особенности проводимости приповерхностных
$\delta$-легированных слоев в GaAs при изменении концентрации двумерных
электронов”, Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1462–1470 |
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1991 |
| 9. |
B. K. Medvedev, V. G. Mokerov, “ELECTRONIC MOBILITY OF GALLIUM-ARSENIDE LAYERS PREPARED THROUGH
MOLECULAR-BEAM EPITAXY IN HYDROGEN ATMOSPHERE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991), 25–28 |
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1990 |
| 10. |
V. I. Polyakov, P. I. Perov, M. G. Ermakov, O. N. Ermakova, V. G. Mokerov, B. K. Medvedev, “Фотоэлектрические характеристики многослойных
$p^{+}{-}i{-}n^{+}$-структур
GaAs$-$AlGaAs с квантовыми ямами”, Fizika i Tekhnika Poluprovodnikov, 24:11 (1990), 2017–2023 |
| 11. |
N. A. Varvanin, V. N. Gubankov, I. N. Kotel’nikov, B. K. Medvedev, V. G. Mokerov, N. A. Mordovets, “Фотопроводимость в области циклотронного резонанса двумерного
электронного газа в GaAs/AlGaAs при больших факторах заполнения”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 635–637 |
| 12. |
B. K. Medvedev, V. G. Mokerov, Yu. V. Slepnev, A. A. Kal'fa, A. R. Kryukov, “RESONANCE TUNNELING IN 2-BARRIER STRUCTURE DIODES ON SEMI-INSULATING
SUBSTRATE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990), 76–78 |
| 13. |
B. K. Medvedev, V. P. Garanin, V. B. Kopylov, V. G. Mokerov, Yu. V. Slepnev, A. L. Kuznetsov, “NEW EPITAXIAL STRUCTURE FOR ARSENIDE-GALLIUM DEVICES ON SILICON
SUBLAYERS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:11 (1990), 48–52 |
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1989 |
| 14. |
N. B. Brandt, V. A. Kul'bachinskii, Yu. E. Lozovik, B. K. Medvedev, V. G. Mokerov, D. Yu. Rodichev, S. M. Chudinov, “Ac quantum Hall effect in $\mathrm{GaAs}$–$\mathrm{Ga}_{1-x}\mathrm{Al}_{x}\mathrm{As}$ heterostructures”, Fizika Tverdogo Tela, 31:3 (1989), 73–78 |
| 15. |
I. E. Batov, S. A. Govorkov, B. K. Medvedev, V. G. Mokerov, V. I. Talyanskii, “FIELD DISTRIBUTION IN BOUNDARY MAGNETOPLASMA OSCILLATIONS IN 2D-CHANNEL
OF GAAS-ALGAAS HETEROSTRUCTURE”, Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989), 136–138 |
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1988 |
| 16. |
L. A. Galchenkov, I. M. Grodnenskii, M. V. Kostovetskii, O. R. Matov, B. A. Medvedev, V. G. Mokerov, “Резонансный эффект Фарадея в ограниченной двумерной электронной
системе”, Fizika i Tekhnika Poluprovodnikov, 22:7 (1988), 1196–1198 |
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1987 |
| 17. |
D. V. Galchenkov, I. M. Grodnenskii, I. I. Zasavitskii, K. V. Starostin, V. G. Mokerov, “Determination of Potential-Barrier Height in Heterojunctions with Two-Dimensional Electron Gas”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1522–1524 |
| 18. |
P. D. Altukhov, A. A. Bakun, B. K. Medvedev, V. G. Mokerov, A. A. Rogachev, G. P. Rubtsov, “Two-Dimensional Electron-Hole System in the Region of Heterojunction in GaAs$-$GaAlAs Structures with Modulated Doping”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 449–455 |
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1986 |
| 19. |
D. I. Bilenko, O. Ya. Belobrovaya, A. S. Ignat'ev, V. G. Mokerov, S. E. Pylaev, I. V. Ryabinin, V. D. Tsiporukha, “DETERMINATION OF THICKNESS AND COMPOSITION OF EPITAXIAL LAYERS DURING
GAAS-GA1-XALX-AS STRUCTURE FORMATION”, Zhurnal Tekhnicheskoi Fiziki, 56:6 (1986), 1198–1201 |
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1984 |
| 20. |
A. S. Ignat'ev, V. G. Mokerov, A. G. Petrova, V. A. Rybin, V. V. Saraikin, “ELECTRON AUGER-SPECTROMETRY OF THIN PLATINUM SILICIDE FILMS ON SILICON”, Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984), 1212–1214 |
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1982 |
| 21. |
Yu. V. Kopaev, V. G. Mokerov, “Mechanism of phase transitions in vanadium and titanium oxides”, Dokl. Akad. Nauk SSSR, 264:6 (1982), 1370–1374 |
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1981 |
| 22. |
L. P. Ageĭkina, V. N. Gavrilov, V. V. Kapaev, V. G. Mokerov, I. V. Ryabinin, A. A. Chastov, “Determination of the parameters of pulsed radiation using semiconductor–metal phase transitions in vanadium dioxide”, Kvantovaya Elektronika, 8:6 (1981), 1363–1366 [Sov J Quantum Electron, 11:6 (1981), 822–824  ] |
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1978 |
| 23. |
K. I. Zemskov, M. A. Kazaryan, V. G. Mokerov, G. G. Petrash, A. G. Petrova, “Coherent properties of a copper vapor laser and dynamic holograms in vanadium dioxide films”, Kvantovaya Elektronika, 5:2 (1978), 425–428 [Sov J Quantum Electron, 8:2 (1978), 245–247] |
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