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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
A. Yu. Blank, E. N. Zinovev, L. P. Ivanov, D. I. Kovalev, I. D. Yaroshetskiĭ, “Экситонная рекомбинация в GaAs, индуцируемая неравновесными
акустическими фононами”, Fizika i Tekhnika Poluprovodnikov, 25:1 (1991), 67–72  |
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1990 |
| 2. |
L. V. Belyakov, D. N. Goryachev, B. D. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “NARROW-BAND SELECTIVE PHOTODETECTORS BASED ON THE SCHOTTKY STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:6 (1990), 72–75 |
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1989 |
| 3. |
E. V. Beregulin, S. D. Ganichev, K. Yu. Glukh, Yu. B. Lyanda-Geller, I. D. Yaroshetskiĭ, “Linear photogalvanic effect in $p$-$\mathrm{GaAs}$ in the classical frequency region”, Fizika Tverdogo Tela, 31:1 (1989), 115–117 |
| 4. |
S. D. Ganichev, S. A. Emelyanov, Y. V. Terentev, I. D. Yaroshetskiĭ, “DOMAIN OF APPLICATION OF LOW-INERTIAL COOLED TO 77-K DETECTORS OF
SUBMILLIMETER RADIATION BASED NORMAL-INSB”, Zhurnal Tekhnicheskoi Fiziki, 59:5 (1989), 111–113 |
| 5. |
L. V. Belyakov, D. N. Goryachev, T. L. Makarova, B. L. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Влияние тонкого диэлектрического слоя на свойства ПЭВ на границе
металл$-$полупроводник”, Fizika i Tekhnika Poluprovodnikov, 23:11 (1989), 1966–1970 |
| 6. |
S. V. Ivanov, P. S. Kop'ev, V. Y. Nekrasov, A. G. Pakhomov, V. N. Trukhin, I. D. Yaroshetskiĭ, “Энергетическая релаксация и транспорт электронов и дырок
в короткопериодичных полупроводниковых сверхрешетках”, Fizika i Tekhnika Poluprovodnikov, 23:9 (1989), 1564–1567 |
| 7. |
V. Y. Nekrasov, V. N. Trukhin, I. D. Yaroshetskiĭ, “Особенности рассеяния коротких световых импульсов на
светоиндуцированных решетках в кремнии”, Fizika i Tekhnika Poluprovodnikov, 23:8 (1989), 1512–1514 |
| 8. |
E. V. Beregulin, I. D. Yaroshetskiĭ, “Исследование релаксации энергии и захвата носителей заряда
при фотоионизации примесных центров в $p$-GaAs”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 947–953 |
| 9. |
L. V. Belyakov, D. N. Goryachev, B. L. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Резонансные явления в структурах Шоттки при возбуждении
«медленных» поверхностных электромагнитных волн”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 461–465 |
| 10. |
S. D. Ganichev, K. Y. Glukh, I. N. Kotel’nikov, N. A. Mordovets, A. Ya. Shul'man, I. D. Yaroshetskiĭ, “POINTED FAST-RESPONSE PHOTODETECTOR OF LASER SUBMILLIMETER EMISSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989), 8–10 |
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1988 |
| 11. |
N. N. Zinov'ev, D. I. Kovalev, I. D. Yaroshetskiĭ, “Acoustic phonon generation in the induced bound-exciton recombination in $\mathrm{CdS}$”, Fizika Tverdogo Tela, 30:3 (1988), 751–755 |
| 12. |
E. V. Beregulin, S. D. Ganichev, K. Yu. Glukh, Yu. B. Lyanda-Geller, I. D. Yaroshetskiĭ, “Linear photogalvanic effect in semiconductors in the submillimeter range”, Fizika Tverdogo Tela, 30:3 (1988), 730–736 |
| 13. |
A. P. Dmitriev, S. A. Emelyanov, Y. V. Terentev, I. D. Yaroshetskiĭ, “О возможности реализации инверсной населенности спиновых подуровней
Ландау в $n$-InSb при интенсивном субмиллиметровом возбуждении”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1045–1048 |
| 14. |
L. V. Belyakov, N. N. Gorobei, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Влияние распределения поля поверхностного поляритона в системе
диэлектрик–металл–полупроводник на фотоответ полупроводника”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 906–910 |
| 15. |
A. V. Andrianov, E. V. Beregulin, S. D. Ganichev, K. Y. Glukh, I. D. Yaroshetskiĭ, “HIGH-SPEED DEVICE FOR POLARIZATION CHARACTERISTICS OF THE PULSE LASER IR
AND SUBMILLIMETER EMISSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:14 (1988), 1326–1329 |
| 16. |
L. V. Belyakov, D. N. Goryachev, B. L. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “RESONANCE ELECTROLUMINESCENCE STRUCTURE OF METAL-SUPERCONDUCTOR WITH THE
CORRUGATE SURFACE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 757–760 |
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1987 |
| 17. |
S. D. Ganichev, S. A. Emelyanov, I. D. Yaroshetskiĭ, “Intraband Photoconduction due to Light Holes and Heating of Carriers in $p$-Type Ge under Submillimeter Laser Excitation”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1011–1015 |
| 18. |
E. V. Beregulin, S. D. Ganichev, K. Y. Glukh, I. D. Yaroshetskiĭ, “Nonlinear Absorption of Submillimeter Radiation in Germanium due to Heating of Charge Carriers by Light”, Fizika i Tekhnika Poluprovodnikov, 21:6 (1987), 1005–1010 |
| 19. |
L. V. Belyakov, D. N. Goryachev, V. I. Emel'yanov, V. N. Seminogov, O. M. Sreseli, I. D. Yaroshetskiĭ, “Resonance quenching the mirror reflection under the excitation of surface electromagnetic-waves on nonmetallic periodic structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 693–697 |
| 20. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Photoresponse of the metal–semiconductor structure under the excitation of surface-polaritons by the TE-polarization light”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:5 (1987), 261–265 |
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1986 |
| 21. |
N. N. Zinov'ev, D. I. Kovalev, I. D. Yaroshetskiĭ, “Electron-phonon coupling in the bound exciton luminescence spectra of $\mathrm{CdS}$”, Fizika Tverdogo Tela, 28:12 (1986), 3595–3602 |
| 22. |
E. V. Beregulin, S. D. Ganichev, I. D. Yaroshetskiĭ, “Nonlinear Light Absorption in $p$-Type Ge in the IR Spectral Range”, Fizika i Tekhnika Poluprovodnikov, 20:7 (1986), 1180–1183 |
| 23. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Influence of optical-constants of semiconductors on the location of a polariton peak of the Schottky diode photoresponse”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1145–1149 |
| 24. |
V. Yu. Nekrasov, A. A. Polyakov, V. N. Trukhin, I. D. Yaroshetskiĭ, “Frequency shift and change in the spectrum of picosecond light pulses scattered by optically induced gratings in semiconductors”, Kvantovaya Elektronika, 13:4 (1986), 847–849 [Sov J Quantum Electron, 16:4 (1986), 552–553  ] |
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1985 |
| 25. |
N. N. Zinovyev, L. P. Ivanov, D. I. Kovalev, I. D. Yaroshetskiĭ, “Collision Ionization of Excitons and Shallow
Impurities in Gallium Arsenide in Electric and Magnetic Crossed
Fields”, Fizika i Tekhnika Poluprovodnikov, 19:12 (1985), 2173–2176 |
| 26. |
B. L. Baskin, A. A. Polyakov, V. N. Trukhin, I. D. Yaroshetskiĭ, “Effect of pulse laser-emission of picosecond termination on the germanium surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:20 (1985), 1251–1257 |
| 27. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Photoresponse of the semiconductor-metal structure related to excitation of surface-polaritons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1162–1165 |
| 28. |
S. D. Ganichev, S. A. Emel'yanov, A. G. Pakhomov, Ya. V. Terent'ev, I. D. Yaroshetskiĭ, “Low-inert uncooled detector of laser-emission of far IR-range and submillimeter range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:15 (1985), 913–915 |
| 29. |
T. V. Burova, A. N. Lodygin, L. G. Paritsky, V. V. Pershin, B. D. Smolkin, V. P. Simonov, V. M. Tuchkevich, I. D. Yaroshetskiĭ, “Electron-optical registration of the gas-discharge luminescence in semiconductive photographic systems and image transformers of the ionized type”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 215–217 |
| 30. |
S. D. Ganichev, Ya. V. Terent'ev, I. D. Yaroshetskiĭ, “Photon-drag photodetectors for the far-IR and submillimeter regions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 46–48 |
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| 31. |
A. V. Vasil'ev, V. Yu. Nekrasov, A. A. Polyakov, V. N. Trukhin, I. D. Yaroshetskiĭ, “Frequency-shift and spectrum broadening of picosecond light-pulses during its propagation in semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985), 34–38 |
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1984 |
| 32. |
N. N. Zinov'ev, L. P. Ivanov, D. I. Kovalev, I. D. Yaroshetskiĭ, “Diffusion of a Nonequilibrium Electron-Hole Plasma in a Magnetic Field
and Its Evidence in Recombination Radiation of Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1233–1236 |
| 33. |
S. D. Ganichev, S. A. Emel'yanov, Ya. V. Terent'ev, I. D. Yaroshetskiĭ, “Charge-Carrier Drag by Photons in Conditions of Multiphoton Absorption of Submillimeter Radiation in $p$-Type Germanium”, Fizika i Tekhnika Poluprovodnikov, 18:2 (1984), 266–269 |
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1983 |
| 34. |
S. D. Ganichev, S. A. Emelyanov, I. D. Yaroshetskiĭ, “Явление увлечения носителей тока фотонами в полупроводниках в дальней
ИК и субмиллиметровой области спектра”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 698–703 |
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1982 |
| 35. |
E. V. Beregulin, P. M. Valov, S. D. Ganichev, Z. N. Kabakova, I. D. Yaroshetskiĭ, “Low-voltage device for passive mode locking of pulsed infrared lasers”, Kvantovaya Elektronika, 9:2 (1982), 323–327 [Sov J Quantum Electron, 12:2 (1982), 175–178 ] |
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1978 |
| 36. |
E. V. Beregulin, P. M. Valov, S. M. Ryvkin, D. V. Tarkhin, I. D. Yaroshetskiĭ, “Very-fast-response uncooled photodetector based on intraband μ-photoconductivity”, Kvantovaya Elektronika, 5:6 (1978), 1386–1389 [Sov J Quantum Electron, 8:6 (1978), 797–799] |
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1977 |
| 37. |
P. M. Valov, K. V. Goncharenko, Yu. V. Markov, V. V. Pershin, S. M. Ryvkin, I. D. Yaroshetskiĭ, “Instruments for detection of infrared laser radiation pulses based on the photon drag of carriers in semiconductors”, Kvantovaya Elektronika, 4:1 (1977), 95–102 [Sov J Quantum Electron, 7:1 (1977), 50–54] |
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1966 |
| 38. |
B. M. Ashkinadze, V. I. Vladimirov, V. A. Likhachev, S. M. Ryvkin, V. M. Salmanov, I. D. Yaroshetskiĭ, “Breakdown caused by a laser beam in hydrodynamic bearing”, Dokl. Akad. Nauk SSSR, 169:5 (1966), 1041–1043 |
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1981 |
| 39. |
Zh. I. Alferov, B. M. Vul, B. P. Zakharchenya, A. M. Prokhorov, V. M. Tuchkevich, G. N. Flerov, I. D. Yaroshetskiĭ, “Solomon Meerovich Ryvkin (Obituary)”, UFN, 135:4 (1981), 719–720 ; Phys. Usp., 24:12 (1981), 1015–1016 |
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