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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
D. Wruck, A. Knauer, “Doping inhomogeneities and behavior of compensation of <i>n</i>-type GaAs and InP”, Kvantovaya Elektronika, 15:11 (1988), 2301–2303  [Sov J Quantum Electron, 18:11 (1988), 1438–1440  ] |
| 2. |
A. Knauer, S. Gramlich, R. Staske, “Dependence of the photoluminescence density on surface preparation and properties of <i>n</i>-type InP”, Kvantovaya Elektronika, 15:11 (1988), 2276–2279 [Sov J Quantum Electron, 18:11 (1988), 1424–1426 ] |
| 3. |
A. Baerwolff, P. Ènders, A. Knauer, D. Linke, U. Zeimer, “Calculation of the yield of fault-free laser diodes from the characteristics of the (100)InP substrate material used in epitaxial double heterostructures”, Kvantovaya Elektronika, 15:11 (1988), 2273–2275 [Sov J Quantum Electron, 18:11 (1988), 1422–1424 ] |
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