|
|
|
Publications in Math-Net.Ru |
Citations |
|
1992 |
| 1. |
V. A. Gergel, E. A. Il'ichev, A. I. Lukyanchenko, É. A. Poltoratskiĭ, K. S. Schamkhalov, “Паразитное управление по подложке в полевых транзисторах на арсениде
галлия”, Fizika i Tekhnika Poluprovodnikov, 26:5 (1992), 794–800  |
|
1991 |
| 2. |
V. A. Gergel, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, S. P. Tarnavskii, A. V. Fedorenko, “Частотная дисперсия крутизны в полевых транзисторах на основе
$\delta$-легированных структур”, Fizika i Tekhnika Poluprovodnikov, 25:11 (1991), 1870–1876 |
| 3. |
V. A. Gergel, A. I. Lukyanchenko, A. N. Solyakov, E. A. Il'ichev, É. A. Poltoratskiĭ, “Температурная зависимость эффекта управления транзистором через
полуизолирующую подложку в интегральных схемах на арсениде галлия”, Fizika i Tekhnika Poluprovodnikov, 25:9 (1991), 1667–1670 |
| 4. |
V. A. Gergel, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, S. P. Tarnavskii, A. V. Fedorenko, “EFFECT OF SCHOTTKY-BARRIER PROPERTIES ON FREQUENCY DISPERSION OF
TRANSCONDUCTANCE OF FIELD TRANSISTOR WITH SCHOTTKY-BARRIER”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991), 78–80 |
| 5. |
V. A. Gergel, E. A. Il'ichev, A. I. Lukyanchenko, É. A. Poltoratskiĭ, K. S. Shamkhalov, “MECHANISMS OF PARASITIC CONTROL ON SUBSTRATE IN GAAS FIELD SCHOTTKY
TRANSISTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:14 (1991), 36–38 |
|
1990 |
| 6. |
V. A. Gergel, E. A. Il'ichev, A. I. Lukyanchenko, É. A. Poltoratskiĭ, A. N. Solyakov, “Физическая модель эффекта управления полевым транзистором через
полуизолирующую подложку”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2111–2116 |
|
1989 |
| 7. |
N. N. Akhmediev, L. L. Betina, V. M. Eleonskii, N. E. Kulagin, N. V. Ostrovskaya, É. A. Poltoratskiĭ, “Optimal self-compression of multisoliton pulses in an optical fiber”, Kvantovaya Elektronika, 16:9 (1989), 1925–1930 [Sov J Quantum Electron, 19:9 (1989), 1240–1244  ] |
8
|
|
1986 |
| 8. |
E. A. Il'ichev, S. K. Maksimov, E. N. Nagdaev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “CHARACTERISTICS OF ELECTROPHYSICAL AND STRUCTURAL-PROPERTIES OF
INSULATING LAYERS IN THE GAAS-ALAS SYSTEM OBTAINED BY THE HYDRID MOS
METHOD”, Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986), 2245–2247 |
| 9. |
E. A. Il'ichev, É. A. Poltoratskiĭ, “Modulation of Negative Space Charge in the Insulator–Semiconductor Structures Produced in a GaAs$-$AlAs System”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1782–1786 |
| 10. |
S. M. Afanasev, E. A. Il'ichev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, B. V. Strizhkov, “Influence of Composition on Electrohysical Properties of Al$_{x}$Ga$_{1-x}$As Insulating Layers Produced by MOC Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1565–1571 |
| 11. |
E. A. Il'ichev, Yu. P. Masloboev, V. M. Maslovskii, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “Trapping of Carriers in Insulator–Semiconductor Structures Produced by MOS Hydride Method in the GaAs-AlAs System”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 757–759 |
| 12. |
E. A. Il'ichev, V. M. Maslovskii, É. A. Poltoratskiĭ, “Electrophysical Properties of Ga$_{1-x}$Al$_x$As Solid-Solution Insulating Layers Produced by MOS Hydride Method”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 594–602 |
|
1984 |
| 13. |
E. A. Il'ichev, Yu. P. Masloboev, É. A. Poltoratskiĭ, A. V. Rodionov, Yu. V. Slepnev, “FIELD TRANSISTOR WITH INSULATED SEALS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984), 420–422 |
|
1983 |
| 14. |
O. A. Belotelova, N. E. Kulagin, É. A. Poltoratskiĭ, “Распространение света в прямоугольных активных волноводах”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983), 945–950 |
| 15. |
O. A. Belotelova, N. E. Kulagin, Yu. P. Masloboev, É. A. Poltoratskiĭ, E. Yu. Shelyukhin, “Распространение света в активных связанных волноводах”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:15 (1983), 941–945 |
| |
|
|
Contact us: