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Publications in Math-Net.Ru |
Citations |
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2007 |
| 1. |
V. P. Duraev, G. B. Lutts, E. T. Nedelin, M. A. Sumarokov, O. I. Medvedkov, S. A. Vasil'ev, “Discretely tunable single-frequency fibre Bragg grating diode laser”, Kvantovaya Elektronika, 37:12 (2007), 1143–1145   [Quantum Electron., 37:12 (2007), 1143–1145   ] |
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2005 |
| 2. |
A. V. Gladyshev, M. I. Belovolov, S. A. Vasil'ev, V. P. Duraev, O. I. Medvedkov, A. I. Nadezhdinskii, E. T. Nedelin, Ya. Ya. Ponurovskii, “Continuously tunable single-frequency 1.52-μm diode laser for gas analysis”, Kvantovaya Elektronika, 35:3 (2005), 241–242 [Quantum Electron., 35:3 (2005), 241–242 ] |
5
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2001 |
| 3. |
V. P. Duraev, E. T. Nedelin, T. P. Nedobyvailo, M. A. Sumarokov, K. I. Klimov, “Bragg fibre grating semiconductor lasers with the narrow emission spectrum in the 1530 – 1560-nm region”, Kvantovaya Elektronika, 31:6 (2001), 529–530 [Quantum Electron., 31:6 (2001), 529–530 ] |
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1998 |
| 4. |
V. P. Duraev, E. T. Nedelin, T. P. Nedobyvailo, M. A. Sumarokov, V. V. Shishkov, “Single-frequency λ = 1.06 μm semiconductor laser with a distributed Bragg mirror in an optical fibre”, Kvantovaya Elektronika, 25:4 (1998), 301–302 [Quantum Electron., 28:4 (1998), 290–291 ] |
4
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1996 |
| 5. |
V. P. Duraev, E. T. Nedelin, A. V. Mel'nikov, M. A. Sumarokov, V. A. Shishkin, “Low-threshold InGaP/InGaAsP lasers with the emission wavelength 1.02 μm”, Kvantovaya Elektronika, 23:9 (1996), 785–786 [Quantum Electron., 26:9 (1996), 765–766 ] |
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1992 |
| 6. |
Vu Van Luc, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, M. V. Tsotsorya, “Interferometric modulation in an optical amplifier based on an InGaAsP/lnP heterostructure”, Kvantovaya Elektronika, 19:7 (1992), 674–676 [Sov J Quantum Electron, 22:7 (1992), 624–626 ] |
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1990 |
| 7. |
Yu. A. Bykovskii, K. B. Dedushenko, V. P. Duraev, I. G. Likhachev, E. T. Nedelin, “Spectral characteristics of InGaAsP/InP injection C<sup>3</sup> lasers”, Kvantovaya Elektronika, 17:4 (1990), 410–411 [Sov J Quantum Electron, 20:4 (1990), 344–346 ] |
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1989 |
| 8. |
Bui Huy, Vu Van Luc, V. P. Duraev, P. G. Eliseev, M. A. Man'ko, E. T. Nedelin, Nguyên Thi Thanh Truong, Nguyên Chyong Thong Nhat, “Single-mode laser amplifier operating in the 1.3 μm range and using a buried stripe heterostructure”, Kvantovaya Elektronika, 16:8 (1989), 1606–1608 [Sov J Quantum Electron, 19:8 (1989), 1034–1036 ] |
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1988 |
| 9. |
I. A. Avrutskiĭ, V. I. Baryshev, V. P. Duraev, E. T. Nedelin, A. S. Svakhin, V. A. Sychugov, T. V. Tulaĭkova, V. I. Shveĭkin, V. V. Shishkov, “Radiation sources for fiber-optic communication lines with wavelength-division multiplexing of data channels in the range 1.3–1.6 μm”, Kvantovaya Elektronika, 15:4 (1988), 702–704 [Sov J Quantum Electron, 18:4 (1988), 446–448 ] |
| 10. |
I. A. Avrutskiĭ, V. P. Duraev, E. T. Nedelin, A. M. Prokhorov, A. S. Svakhin, V. A. Sychugov, A. V. Tishchenko, “Optimization of the characteristics of a dispersive element based on a corrugated waveguide”, Kvantovaya Elektronika, 15:3 (1988), 569–574 [Sov J Quantum Electron, 18:3 (1988), 362–365 ] |
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1987 |
| 11. |
I. A. Avrutskiĭ, V. P. Duraev, E. T. Nedelin, A. M. Prokhorov, A. S. Svakhin, V. A. Sychugov, “Single-frequency semiconducting laser with $\lambda=1.3$ mu-m with the fiber external resonator”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:14 (1987), 849–854 |
| 12. |
V. P. Duraev, P. G. Eliseev, B. I. Makhsudov, E. T. Nedelin, V. I. Shveĭkin, “Low-threshold InGaAsP/InP injection lasers”, Kvantovaya Elektronika, 14:11 (1987), 2201–2202 [Sov J Quantum Electron, 17:11 (1987), 1402–1403 ] |
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1983 |
| 13. |
E. G. Golikova, A. A. Gvozdev, V. P. Duraev, N. V. Malkova, E. T. Nedelin, B. N. Sverdlov, M. A. Sumarokov, A. A. Shelyakin, “SUPERLUMINESCENT EMITTERS ON THE BASIS OF GAINASP-INP HETEROSTRUCTURES
WITH A 1,3-1,55MKM RADIATION WAVE-LENGTH”, Zhurnal Tekhnicheskoi Fiziki, 53:11 (1983), 2286–2288 |
| 14. |
M. G. Vasilev, A. A. Gvozdev, A. T. Gorelenok, Yu. V. Gulyaev, V. F. Dvoryankin, V. P. Duraev, P. G. Eliseev, V. V. Kozhin, E. T. Nedelin, G. A. Sinitsyna, I. S. Tarasov, A. A. Telegin, A. S. Usikov, V. I. Shveĭkin, A. A. Shelyakin, “LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON
INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY”, Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983), 1413–1414 |
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1982 |
| 15. |
L. M. Dolginov, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, B. N. Sverdlov, V. I. Shveĭkin, E. G. Shevchenko, “Temperature dependences of the emission characteristics of GaInPAs/InP injection lasers”, Kvantovaya Elektronika, 9:9 (1982), 1902–1904 [Sov J Quantum Electron, 12:9 (1982), 1237–1238 ] |
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1981 |
| 16. |
V. V. Bezotosnyi, V. P. Duraev, P. G. Eliseev, E. T. Nedelin, B. N. Sverdlov, G. V. Shepekina, I. N. Shishkin, “Service life of GalnPAs/lnP heterostructures”, Kvantovaya Elektronika, 8:9 (1981), 1985–1987 [Sov J Quantum Electron, 11:9 (1981), 1201–1202 ] |
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