Phase transition,
the thin film of vanadium dioxide,
the correlation effects,
Peierls,
hydrogenation,
metal,
insulator,
semiconductor,
area of the hysteresis loop,
the tetragonal symmetry,
monoclinic symmetry,
Raman spectra,
a Fabry–Perot.
Subject:
Correlation nature of the phase transition dielectric–metal vanadium dioxide
A.V.Ilinskii, O.E.Kvashenkina, E.B.Shadrin, “Metallizatsiya gidrirovaniem monoklinnoi fazy
v plenkakh VO2”, Fizika i tekhnika poluprovodnikov, 45:9 (2011), 1197–1202
A.V.Ilinskii, O.E.Kvashenkina, E.B.Shadrin, “Fazovyi perekhod i korrelyatsionnye effekty v diokside vanadiya”, Fizika i tekhnika poluprovodnikov, 46:9 (2012), 439–446
A.V.Ilinskii, O.E.Kvashenkina, E.B.Shadrin, “Priroda elektronnoi sostavlyayuschei termicheskogo fazovogo perekhoda v plenkakh VO2”, Fizika i tekhnika poluprovodnikov, 46:9 (2012), 1194–1028
I.N.Goncharuk, A.V.Ilinskii, O.E.Kvashenkina, E.B.Shadrin, “Elektron-elektronnye korrelyatsii v spektrakh kombinatsionnogo rasseyaniya VO2”, Pokazano, chto v monokristallakh i plenkakh silno korrelirovannogo materiala — dioksida vanadiya — pri termostimulirovannom fazovom perekhode iz nizkotemperaturnoi monoklinnoi v vysokotemperaturnuyu tetragonalnuyu fazu uzkolineichatyi spektr kombinatsionnogo rasseyaniya sveta izoliruyuschei (monoklinnoi) fazy transformiruetsya v shirokopolosnyi spektr, kotoryi soderzhit dva maksimuma pri 500 i 5000 cm-1 s shirinami 400 i 3500 cm-1, sootvetstvenno. Ustanovleno, chto po mere priblizheniya temperatury monoklinnoi fazy k temperature strukturnogo fazovogo perekhoda (340 K) kontur linii fonona myagkoi mody s chastotoi 149 cm-1 simmetrii Ag i kontur linii fonona 201 cm-1 simmetrii Ag priobretayut asimmetrichnuyu formu s antirezonansom tipa Fano, kharakternuyu dlya vzaimodeistviya odinochnogo fononnogo kolebaniya s silno korrelirovannym elektronnym kontinuumom. Pokazano, chto termicheskaya transformatsiya maksimumov v spektrakh kombinatsionnogo rasseyaniya sveta metallicheskoi fazy VO2 nakhoditsya v kolichestvennom soglasii s teoriei kombinatsionnogo rasseyaniya sveta v silno korrelirovannykh materialakh., Fizika i tekhnika poluprovodnikov, 55:1 (2013), 147-156
O. E. Kvashenkina, E. D. Èidel'man, V. S. Osipov, P. G. Gabdullin, B. B. Khina, “Estimation of the maximum transverse size of multilayer bimetallic films for self-propagating high-temperature synthesis for the Ni/Al structure as an example”, Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020), 1189–1194; Tech. Phys., 65:7 (2020), 1144–1149
A. V. Arkhipov, A. M. Zhurkin, O. E. Kvashenkina, V. S. Osipov, P. G. Gabdullin, “Electron overheating during field emission from carbon island films due to phonon bottleneck effect”, Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 110–113
A. V. Arkhipov, P. G. Gabdullin, S. K. Gordeev, A. M. Zhurkin, O. E. Kvashenkina, “Photostimulation of conductivity and electronic properties of field-emission nanocarbon coatings on silicon”, Zhurnal Tekhnicheskoi Fiziki, 86:12 (2016), 135–144; Tech. Phys., 62:1 (2017), 127–136
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