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Publications in Math-Net.Ru |
Citations |
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2006 |
| 1. |
A. I. Belogorokhov, I. A. Belogorohov, M. I. Vasilevskii, S. A. Gavrilov, R. P. Miranda, T. Dittrich, D. R. Khokhlov, “Infrared absorption by polar optical phonons in a CdS nanocrystal array consisting of quantum dots and quantum wires”, Pis'ma v Zh. Èksper. Teoret. Fiz., 84:3 (2006), 152–155  ; JETP Letters, 84:3 (2006), 124–126   |
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1987 |
| 2. |
M. I. Vasilevskii, V. A. Panteleev, “Electrically inactive fraction of the shallow impurity in silicon”, Fizika Tverdogo Tela, 29:10 (1987), 3072–3076 |
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1986 |
| 3. |
V. A. Panteleev, M. I. Vasilevskii, G. M. Golemshtok, V. I. Okulich, “Defect interaction in the phosphorus diffusion in silicon”, Fizika Tverdogo Tela, 28:10 (1986), 3226–3228 |
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1985 |
| 4. |
M. I. Vasilevskii, S. N. Ershov, V. A. Panteleev, “Uniform-distribution instability of displacive charged impurity in semiconductors”, Fizika Tverdogo Tela, 27:8 (1985), 2282–2285 |
| 5. |
M. I. Vasilevskii, G. M. Golemshtok, V. A. Panteleev, “Effects of intrinsic elastic stresses and phonon spectrum distortions on defect-formation and diffusion in semiconductors”, Fizika Tverdogo Tela, 27:1 (1985), 126–132 |
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1984 |
| 6. |
M. I. Vasilevskii, V. A. Panteleev, “Intrinsic electric field effect on diffusion of fifth group elements in silicon”, Fizika Tverdogo Tela, 26:1 (1984), 60–64 |
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1983 |
| 7. |
V. A. Panteleev, M. I. Vasilevskii, Yu. L. Kalinkin, “Microscopic analysis of the elastic stress effect on displacive impurity atom migration in silicon”, Fizika Tverdogo Tela, 25:10 (1983), 2930–2935 |
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