|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
1. |
Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, L. V. Sokolov, “Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure”, Fizika Tverdogo Tela, 61:2 (2019), 284–287 ; Phys. Solid State, 61:2 (2019), 145–148 |
|
2008 |
2. |
Yu. B. Bolkhovityanov, O. P. Pchelyakov, “GaAs epitaxy on Si substrates: modern status of research and engineering”, UFN, 178:5 (2008), 459–480 ; Phys. Usp., 51:5 (2008), 437–456 |
250
|
|
2001 |
3. |
Yu. B. Bolkhovityanov, O. P. Pchelyakov, S. I. Chikichev, “Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures”, UFN, 171:7 (2001), 689–715 ; Phys. Usp., 44:7 (2001), 655–680 |
64
|
|
1990 |
4. |
N. S. Rudaya, Yu. B. Bolkhovityanov, K. S. Zhuravlev, O. A. Shegai, N. A. Yakusheva, “HIGHLY PURE P-GAAS GROWN FROM GAAS SOLUTION TO BI ALLOYED BY YTTERBIUM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990), 37–40 |
5. |
Yu. B. Bolkhovityanov, B. V. Morozov, A. G. Paulish, A. S. Suranov, A. S. Terekhov, E. K. Khairi, S. V. Shevelev, “SEMICLEAR ARSENIDE-GALLIUM PHOTOCATHODE ON THE GLASS WITH
PHOTOSENSITIVITY UP TO 1700-MCA/LM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:7 (1990), 25–29 |
|
1989 |
6. |
Yu. B. Bolkhovityanov, L. M. Logvinskii, N. S. Rudaya, “CHARACTERISTICS OF THE FORMATION OF A SOLID-PHASE UNDER A CONTACT
CHANGING OF SOLUTIONS - GROWTH OF GAAS ON ALGAAS SURFACE”, Zhurnal Tekhnicheskoi Fiziki, 59:8 (1989), 57–63 |
7. |
Yu. B. Bolkhovityanov, L. M. Logvinskii, N. S. Rudaya, “TRANSITION LAYERS IN ALGAAS/GAAS HETEROSTRUCTURES, GROWN BY THE CONTACT
SOLUTION RENEWING - THEORY AND EXPERIMENT”, Zhurnal Tekhnicheskoi Fiziki, 59:3 (1989), 178–185 |
|
1986 |
8. |
Yu. B. Bolkhovityanov, R. I. Bolhovityanova, Yu. D. Vaulin, B. Z. Olshanetsky, “NATURE OF ALGAAS SEPARATING LAYER ON THE GAAS SURFACE DURING ITS
ISOTHERMAL CONTACTS WITH THE AL-GA-AS LIQUID-PHASE”, Zhurnal Tekhnicheskoi Fiziki, 56:3 (1986), 601–603 |
9. |
V. Ya. Prinz, E. Kh. Khairi, V. A. Samoilov, Yu. B. Bolkhovityanov, “Deep Level Induced into GaAs by Doping with Sb Isovalent Impurity”, Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1392–1395 |
|
Organisations |
|
|
|
|