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Publications in Math-Net.Ru |
Citations |
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1991 |
| 1. |
A. N. Georgobiani, A. N. Gruzintsev, A. V. Zayats, A. V. Bureev, A. D. Levit, “Влияние низкотемпературного отжига на дефектную структуру кристаллов
CdS : Li”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 390–393  |
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1988 |
| 2. |
A. N. Georgobiani, A. N. Gruzintsev, A. V. Zayats, “Излучательная рекомбинация носителей в полупроводниках с участием
бинарных комплексов дефектов”, Fizika i Tekhnika Poluprovodnikov, 22:12 (1988), 2146–2150 |
| 3. |
A. N. Georgobiani, Z. P. Ilyukhina, N. B. Pyshnaya, I. M. Tiginyanu, V. V. Ursaki, “Слои $p$-типа на кристаллах $i$-GaAs, отожженных в водороде”, Fizika i Tekhnika Poluprovodnikov, 22:6 (1988), 1110–1112 |
| 4. |
S. I. Vedeneev, A. N. Georgobiani, A. D. Levit, N. G. Rambidi, P. A. Todua, E. F. Shestakova, B. T. Eltazarov, “Излучательные и электрофизические свойства МДП структур
на основе CdS и ленгмюровской пленки”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 936–938 |
| 5. |
A. N. Georgobiani, A. N. Gruzintsev, A. V. Zayats, A. D. Levit, “Влияние слабых электрических полей на фоточувствительность
и люминесценцию CdS в краевой области спектра”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 780–783 |
| 6. |
A. N. Georgobiani, I. M. Tiginyanu, “Антиструктурные дефекты в соединениях
$A^{\mathrm{III}}B^{\mathrm{V}}$”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 3–15 |
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1987 |
| 7. |
A. N. Georgobiani, V. P. Kalinushkin, D. I. Murin, T. M. Murina, A. M. Prokhorov, “Effect of Sample Temperature on Light Scattering by Impurity Accumulations in Indium Phosphide”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2125–2129 |
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1986 |
| 8. |
A. N. Georgobiani, P. N. Metelinskii, S. I. Radautsan, I. M. Tiginyanu, V. V. Ursaki, “Optical properties of $\mathrm{HgGa}_{2}\mathrm{Se}_{4}$ near the fundamental absorption edge”, Fizika Tverdogo Tela, 28:4 (1986), 1179–1180 |
| 9. |
A. N. Georgobiani, P. N. Metelinskii, S. I. Radautsan, I. M. Tiginyanu, V. V. Ursaki, “Correction to the Paper «Effect of Anealing and Im plantation of Selenium Ions on Photoconduction and Luminescence Spectra of HgGa$_2$Se$_4$»”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 2131 ; Semiconductors, 20:11 (1986), 1332  |
| 10. |
A. N. Georgobiani, I. M. Tiginyanu, V. V. Ursaki, “Temperature Dependence of Absorption Edge in CdGa$_{2}$Se$_{4}$ and CdIn$_{2}$Se$_{4}$ Compounds”, Fizika i Tekhnika Poluprovodnikov, 20:10 (1986), 1914–1916 |
| 11. |
A. N. Georgobiani, P. N. Metelinskii, S. I. Radautsan, I. M. Tiginyanu, V. V. Ursaki, “Effect of Annealing and Implantation of Selenium Ions on Photocondttction and Luminescence Spectra of HgGa$_{2}$Se$_{4}$”, Fizika i Tekhnika Poluprovodnikov, 20:6 (1986), 1116–1118 |
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1985 |
| 12. |
A. N. Georgobiani, A. V. Mikulenok, I. M. Tiginyanu, V. V. Ursaki, “Photoconduction of Indium Phosphide
due to P$_{\text{In}}$ Anti-Structural
Defect”, Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1310–1312 |
| 13. |
A. N. Georgobiani, V. P. Kalinushkin, A. V. Mikulenok, D. I. Murin, A. M. Prokhorov, S. I. Radautsan, I. M. Tiginyanu, V. V. Ursaki, “Aggregate of Electrically Active Impurities in Indium-Phosphide Single Crystals”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 810–813 |
| 14. |
A. N. Georgobiani, S. I. Radautsan, I. M. Tiginyanu, “A$^{\text{II}}$B$^{\text{III}}_{2}$C$^{\text{VI}}_{4}$ Wide-Band Semiconductors: Optical and Photoelectric Properties and Prospects of Application (Review”, Fizika i Tekhnika Poluprovodnikov, 19:2 (1985), 193–212 |
| 15. |
A. N. Georgobiani, A. V. Mikulenok, O. V. Ogneva, V. N. Ravich, I. G. Stoyanova, I. M. Tiginyanu, “Properties of $p{-}n$ Junction Produced by Magnesiu-Ion Implantation into InP”, Fizika i Tekhnika Poluprovodnikov, 19:1 (1985), 160–161 |
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1984 |
| 16. |
A. N. Georgobiani, A. V. Mikulenok, I. M. Tiginyanu, V. V. Ursaki, “Особенности релаксации фотопроводимости в монокристаллах
InP$\langle$Fe$\rangle$”, Fizika i Tekhnika Poluprovodnikov, 18:10 (1984), 1812–1815 |
| 17. |
A. N. Georgobiani, Z. P. Ilyukhina, B. N. Levonovich, N. V. Serdyuk, “Electroluminescent Characteristics of a ZnSe-Based Light Diode”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 408–411 |
| 18. |
O. V. Bogdankevich, A. N. Georgobiani, V. G. Dyukov, O. D. Knab, A. D. Levit, V. B. Mityukhlyaev, O. E. Strumban, P. A. Todua, V. N. Faifer, “RECORDING OF ELECTRON SOUNDS ON MONOCRYSTALS CADMIUM SULFIDES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:7 (1984), 392–394 |
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1983 |
| 19. |
A. N. Georgobiani, A. V. Mikulenok, V. N. Ravich, I. G. Stoyanova, I. M. Tiginyanu, “Фотолюминесценция кристаллов
InP и InP : Fe с имплантированной примесью магния”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2177–2179 |
| 20. |
A. N. Georgobiani, V. S. Donu, Z. P. Ilyukhina, V. I. Pavlenko, I. M. Tiginyanu, “Голубая фотолюминесценция тиогаллата кадмия”, Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1524–1525 |
| 21. |
A. N. Georgobiani, A. V. Mikulnok, E. I. Panasyuk, S. I. Radautsan, I. M. Tiginyanu, “Глубокие центры в не легированных и легированных железом
монокристаллах фосфида индия”, Fizika i Tekhnika Poluprovodnikov, 17:4 (1983), 593–598 |
| 22. |
A. N. Georgobiani, A. A. Kamarzin, E. S. Logozinskaya, Zh. A. Pukhliĭ, “Оптическое гашение фотопроводимости в монокристаллах
$\gamma$-La$_{2}$S$_{3}$”, Fizika i Tekhnika Poluprovodnikov, 17:2 (1983), 316–318 |
| 23. |
O. V. Bogdankevich, A. N. Georgobiani, V. G. Solin, P. A. Todua, “Investigation of the refractive index profiles of multilayer Ga<sub>1–<i>x</i></sub>Al<sub><i>x</i></sub>As laser heterostructures”, Kvantovaya Elektronika, 10:2 (1983), 426–427 [Sov J Quantum Electron, 13:2 (1983), 240–241 ] |
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1982 |
| 24. |
A. N. Georgobiani, M. V. Glushkov, A. A. Kamarzin, E. S. Logozinskaya, Yu. N. Malovitskiĭ, Zh. A. Pukhliĭ, V. V. Sokolov, I. M. Tiginyanu, I. A. Shcherbakov, “Investigation of some photoelectric and luminescence properties of <i>γ</i> -La<sub>2</sub>S<sub>3</sub> single crystals”, Kvantovaya Elektronika, 9:7 (1982), 1515–1517 [Sov J Quantum Electron, 12:7 (1982), 972–974 ] |
8
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1980 |
| 25. |
A. N. Georgobiani, L. N. Ivanov, V. G. Solin, P. A. Todua, “Investigation of the parameters of laser radiation modulators utilizing the Franz-Keldysh effect”, Kvantovaya Elektronika, 7:3 (1980), 624–626 [Sov J Quantum Electron, 10:3 (1980), 354–355 ] |
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1979 |
| 26. |
L. N. Kurbatov, G. S. Kozina, T. A. Kostinskaya, V. S. Rudnevskiĭ, I. M. Tkachenko, A. N. Georgobiani, V. B. Gutan, “Electron-beam-excited ultraviolet semiconductor laser”, Kvantovaya Elektronika, 6:9 (1979), 2045–2046 [Sov J Quantum Electron, 9:9 (1979), 1204–1205] |
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1975 |
| 27. |
O. V. Bogdankevich, N. A. Borisov, A. N. Georgobiani, V. B. Gutan, Z. I. Ilyukhina, B. M. Lavrushin, O. V. Matveev, E. I. Panesyuk, V. F. Pevtsov, N. L. Poletaev, “Continuous tuning of the emission frequency of electronbeam- pumped lasers”, Kvantovaya Elektronika, 2:10 (1975), 2231–2237 [Sov J Quantum Electron, 5:10 (1975), 1215–1218] |
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1974 |
| 28. |
A. N. Georgobiani, “Wide-band II–VI semiconductors and the prospects of their application”, UFN, 113:1 (1974), 129–155 ; Phys. Usp., 17:3 (1974), 424–437 |
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2008 |
| 29. |
A. G. Vitukhnovsky, I. G. Zubarev, L. V. Keldysh, O. N. Krokhin, A. M. Leontovich, A. V. Masalov, Yu. P. Timofeev, Z. A. Chizhikova, A. N. Georgobiani, “Mikhail Dmitrievich Galanin (7.02.1915 — 3.05.2008)”, Kvantovaya Elektronika, 38:6 (2008), 612  [Quantum Electron., 38:6 (2008), 612 ] |
| 30. |
V. M. Agranovich, Yu. N. Vavilov, A. G. Vitukhnovskii, A. N. Georgobiani, V. L. Ginzburg, O. N. Krokhin, V. S. Lebedev, A. M. Leontovich, A. V. Masalov, Yu. P. Timofeev, Z. A. Chizhikova, “In memory of Mikhail Dmitrievich Galanin”, UFN, 178:11 (2008), 1237–1238 ; Phys. Usp., 51:11 (2008), 1191–1192 |
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