|
|
|
Publications in Math-Net.Ru |
Citations |
|
1990 |
| 1. |
B. S. Kondrat'ev, I. V. Popov, A. M. Strel'chuk, M. L. Tiranov, “Электрические характеристики и температурный коэффициент напряжения
пробоя микроплазм в низковольтных карбид-кремниевых $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 647–652  |
|
1989 |
| 2. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, A. M. Strel'chuk, A. L. Syrkin, “Разновидность неклассического термоинжекционного тока
в карбид-кремниевых $p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:10 (1989), 1813–1818 |
| 3. |
M. M. Anikin, V. V. Evstropov, I. V. Popov, V. N. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Неклассический термоинжекционный ток в карбид-кремниевых
$p{-}n$-структурах”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 647–651 |
|
1988 |
| 4. |
M. M. Anikin, M. E. Levinshteĭn, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, “Температурная зависимость напряжения лавинного пробоя
в карбид-кремниевых $p{-}n$-переходах”, Fizika i Tekhnika Poluprovodnikov, 22:9 (1988), 1574–1579 |
| 5. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Rastegaev, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Электрические характеристики эпитаксиальных
$p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 298–300 |
| 6. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, S. N. Pyatko, V. P. Rastegaev, A. L. Syrkin, B. V. Tsarenkov, V. E. Chelnokov, “Электростатические свойства SiC-$6H$-структур с резким
$p{-}n$-переходом”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 133–136 |
|
1987 |
| 7. |
V. A. Dmitriev, P. A. Ivanov, V. I. Levin, I. V. Popov, A. M. Strel'chuk, Yu. M. Tairov, V. F. Cvetkov, V. E. Chelnokov, “Formation of $Si\,C$ epitaxial R-P-structures of sublayers, obtained from volume $Si\,C$ crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:19 (1987), 1168–1171 |
|
1986 |
| 8. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1654–1657 |
| 9. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, A. M. Strel'chuk, A. V. Suvorov, A. L. Syrkin, V. E. Chelnokov, “Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 844–848 |
| 10. |
I. V. Popov, A. L. Sirkin, V. E. Chelnokov, “Reactive ion-plasma beam etching of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:4 (1986), 240–243 |
|
1985 |
| 11. |
V. A. Dmitriev, P. A. Ivanov, A. M. Strel'chuk, A. L. Sirkin, I. V. Popov, V. E. Chelnokov, “Tunnel-diode based on $Si\,C$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:16 (1985), 976–978 |
| 12. |
V. A. Dmitriev, P. A. Ivanov, Ya. V. Morozenko, I. V. Popov, V. E. Chelnokov, “Silicon-carbide light-emitting-diodes in the blueviolet spectrum area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 246–248 |
| 13. |
V. A. Dmitriev, P. A. Ivanov, I. V. Korkin, Ya. V. Morozenko, I. V. Popov, T. A. Sidorova, A. M. Strel'chuk, V. E. Chelnokov, “Silicon-carbide R-P-structures produced by liquid epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 238–241 |
|
1984 |
| 14. |
M. M. Anikin, A. A. Lebedev, I. V. Popov, V. E. Sevastyanov, A. L. Sirkin, A. L. Suvorov, V. E. Chelnokov, G. P. Spynev, “RECTIFIER DIODE BASED ON SILICON-CARBIDE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984), 1053–1056 |
|
1953 |
| 15. |
I. V. Popov, “Remark on the note, “On a question of Prof. V. N. Deputatov””, Uspekhi Mat. Nauk, 8:3(55) (1953), 151  |
|
1951 |
| 16. |
I. V. Popov, “On a question of Prof. V. N. Deputatov”, Uspekhi Mat. Nauk, 6:4(44) (1951), 170–171  |
| |
|
|
Contact us: