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Publications in Math-Net.Ru |
Citations |
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1991 |
1. |
L. V. Golubev, A. V. Egorov, S. V. Novikov, I. G. Savelev, V. V. Chaldyshev, R. G. Shapovalov, Yu. V. Shmartsev, “USE OF ELECTROLIQUID EPITAXY FOR THE GROWING VOLUME CRYSTALS AND
SIMULTANEOUS PREPARATION OF LAYERS ON SEVERAL SUBSTRATES”, Zhurnal Tekhnicheskoi Fiziki, 61:3 (1991), 74–79 |
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1988 |
2. |
L. V. Golubev, A. M. Kreschuk, S. V. Novikov, T. A. Polyanskaya, I. G. Savelev, I. I. Saidashev, “Получение гетероструктур с двумерным электронным газом методом
стандартной жидкофазной эпитаксии”, Fizika i Tekhnika Poluprovodnikov, 22:11 (1988), 1948–1954 |
3. |
V. M. Amusya, Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Зависимость ширины запрещенной зоны от состава в твердом растворе
InP$_{1-x}$Sb$_{x}$ (${x\leqslant 0.07}$)”, Fizika i Tekhnika Poluprovodnikov, 22:2 (1988), 342–344 |
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1987 |
4. |
Yu. F. Birulin, V. V. Vorob'eva, V. G. Golubev, L. V. Golubev, V. I. Ivanov-Omskii, S. V. Novikov, A. V. Osutin, I. G. Savelev, V. V. Chaldyshev, Yu. V. Shmartsev, O. V. Yaroshevich, “Mechanism of «Purification» of Gallium Arsenide by Bismuth”, Fizika i Tekhnika Poluprovodnikov, 21:12 (1987), 2201–2209 |
5. |
Yu. F. Birulin, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Effect of Isovalent Bismuth Doping on Shallow-Acceptor Concentration in Gallium Arsenide”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 949–952 |
6. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, Yu. V. Shmartsev, “Photoluminescence of germanium-alloyed and bismuth-alloyed $Ga\,As$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1264–1267 |
7. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, V. V. Chaldyshev, T. V. Cherneva, Yu. V. Shmartsev, “Solid-solution in the indium phosphide–indium antimonide system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 188–191 |
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1985 |
8. |
L. V. Golubev, V. N. Karyaev, S. V. Kidalov, T. S. Argunova, I. L. Shul'pina, “DISLOCATION DENSITY AND P-N STRUCTURE PARAMETERS BASED ON GAAS(1-X)SBX
SOLID-SOLUTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2280–2282 |
9. |
L. V. Golubev, O. V. Zelenova, S. V. Novikov, Yu. V. Shmartsev, “Equilibrium electro-liquid $Ga\,As_{1-x}\,Sb_{x}/Ga\,Sb$ epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 230–233 |
10. |
V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “Electro-liquid epitaxy of the 4-component $Ga\,As_{1-x-y}\,Sb_{x}\,P_{y}$ solid-solution”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 224–226 |
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1984 |
11. |
L. V. Golubev, O. V. Zelenova, S. V. Novikov, Yu. V. Shmartsev, “ELECTRO-LIQUID EPITAXY OF INAS1-XSBX SOLID-SOLUTIONS”, Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984), 2233–2237 |
12. |
K. M. Gambaryan, V. A. Gevorkyan, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “ANALYSIS OF ADMIXTURE DISTRIBUTION UNDER EQUILIBRIUM ELECTRIC-LIQUID
EPITAXY”, Zhurnal Tekhnicheskoi Fiziki, 54:10 (1984), 2011–2015 |
13. |
Yu. F. Birulin, V. V. Vorob'eva, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “STRUCTURE CONTROL IN THE ELECTROLIQUID EPITAXY METHOD”, Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984), 1394–1399 |
14. |
A. V. Svidzinskii, L. V. Golubev, “Methods of the theory of current states in superconducting SNS sandwiches at near critical temperatures”, TMF, 59:1 (1984), 129–138 ; Theoret. and Math. Phys., 59:1 (1984), 404–410 |
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1983 |
15. |
V. A. Gevorkyan, L. V. Golubev, A. E. Khachatryan, Yu. V. Shmartsev, “GROWTH-KINETICS IN THE EQUILIBRIUM ELECTRIC-LIQUID EPITAXY”, Zhurnal Tekhnicheskoi Fiziki, 53:3 (1983), 545–549 |
16. |
L. V. Golubev, S. G. Koronnyi, S. V. Novikov, Yu. V. Shmartsev, “Электрожидкостная эпитаксия InAs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:16 (1983), 961–964 |
17. |
L. V. Golubev, S. V. Novikov, S. N. Savelyeva, Yu. V. Shmartsev, “Определение некоторых параметров раствора–расплава в электрожидкостной
эпитаксии”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983), 662–666 |
18. |
Yu. F. Birulin, L. V. Golubev, S. V. Novikov, Yu. V. Shmartsev, “Электрожидкостная эпитаксия в системе (GaAs$_{1-x}$Sb$_{x}$)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:3 (1983), 155–158 |
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