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Publications in Math-Net.Ru |
Citations |
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1992 |
| 1. |
A. P. Novikov, G. A. Gusakov, F. F. Komarov, V. P. Tolstykh, “О механизме ионно-индуцированной кристаллизации в кремнии”, Fizika i Tekhnika Poluprovodnikov, 26:10 (1992), 1841–1844  |
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1990 |
| 2. |
P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin, K. D. Demakov, E. V. Kotov, A. P. Novikov, S. G. Shemardov, “Высокотемпературная ионная имплантация мышьяка в кремний”, Fizika i Tekhnika Poluprovodnikov, 24:6 (1990), 1132–1133 |
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1989 |
| 3. |
I. A. Bachilo, R. V. Gribkovskii, F. F. Komarov, V. A. Mironenko, A. P. Novikov, “FORMATION OF BETA-SI3N4 HIDDEN LAYER UNDER HIGHLY EFFICIENT ION
IRRADIATION (HII) OF SILICONE”, Zhurnal Tekhnicheskoi Fiziki, 59:1 (1989), 200–202 |
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1988 |
| 4. |
F. F. Komarov, A. P. Novikov, S. A. Petrov, “FORMATION OF TWINS AND HEXAGONAL MODIFICATION IN SILICON UNDER THE
RADIATION WITH INTENSIVE AR+ ION-BEAMS”, Zhurnal Tekhnicheskoi Fiziki, 58:3 (1988), 548–551 |
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1987 |
| 5. |
F. F. Komarov, E. V. Kotov, A. P. Novikov, S. A. Petrov, T. T. Samoilyuk, “Residual Defects in Silicon under Implantation of As$^{+}$ Ions in the Self-Annealing Mode”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1863–1867 |
| 6. |
P. A. Aleksandrov, E. K. Baranova, K. D. Demakov, A. S. Ignat'ev, F. F. Komarov, A. P. Novikov, “Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping”, Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 920–922 |
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1986 |
| 7. |
F. F. Komarov, A. P. Novikov, I. A. Radishevskii, T. T. Samoilyuk, V. P. Tolstykh, “Annealing of Defects and Electric Activation of Impurity in the Process of Highly Intensive Ionic Doping of Silicon”, Fizika i Tekhnika Poluprovodnikov, 20:9 (1986), 1726–1728 |
| 8. |
P. A. Aleksandrov, E. K. Baranova, K. D. Demakov, F. F. Komarov, A. P. Novikov, S. Yu. Shiryaev, “Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping”, Fizika i Tekhnika Poluprovodnikov, 20:1 (1986), 149–152 |
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1985 |
| 9. |
V. S. Andreev, S. B. Efimov, F. F. Komarov, A. P. Novikov, T. T. Samoiluk, V. S. Solov'ev, S. Yu. Shiryaev, “Crystallization and the effect of the annealing macrodefects during the process of high dense ionic implantation of semiconducting crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:18 (1985), 1110–1113 |
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1980 |
| 10. |
A. P. Novikov, “Kronecker's limit formula in a real quadratic field”, Izv. Akad. Nauk SSSR Ser. Mat., 44:4 (1980), 886–917   ; Math. USSR-Izv., 17:1 (1981), 147–176  |
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1969 |
| 11. |
A. P. Novikov, “On regularity of first-degree prime divisors of an imaginary quadratic field”, Izv. Akad. Nauk SSSR Ser. Mat., 33:5 (1969), 1059–1079 ; Math. USSR-Izv., 3:5 (1969), 1001–1018 |
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1967 |
| 12. |
A. P. Novikov, “On the class number of fields, abelian over an imaginary quadratic field”, Izv. Akad. Nauk SSSR Ser. Mat., 31:3 (1967), 717–726 ; Math. USSR-Izv., 1:3 (1967), 697–705 |
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1962 |
| 13. |
A. P. Novikov, “On the class number of fields with complex multiplication”, Izv. Akad. Nauk SSSR Ser. Mat., 26:5 (1962), 677–686 |
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1977 |
| 14. |
K. A. Bezhanov, O. V. Besov, A. V. Bitsadze, I. A. Borachinsky, A. A. Vasharin, V. S. Vladimirov, N. V. Zvolinsky, V. A. Il'in, V. P. Korobeinikov, L. D. Kudryavtsev, L. P. Kuptsov, P. I. Lizorkin, Yu. I. Makarychev, V. E. Mirakov, V. P. Mikhailov, E. F. Mishchenko, S. M. Nikol'skii, Yu. S. Nikol'skii, A. P. Novikov, T. S. Pigolkina, S. I. Pokhozhaev, E. A. Romishevsky, S. L. Sobolev, S. V. Uspenskii, M. I. Shabunin, G. N. Yakovlev, “Владимир Михайлович Шалов (некролог)”, Differ. Uravn., 13:6 (1977), 1149–1153 |
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