1. |
A. S. Parshin, S. A. Kushchenkov, O. P. Pchelyakov, Yu. L. Mikhlin, “Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure SiO$_{2}$/Si(111) by inelastic electron scattering cross-section spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 344–349 ; Semiconductors, 50:3 (2016), 339–344 |