1. |
A. Nasri, A. Boubaker, W. Khaldi, B. Hafsi, A. Kalboussi, “Single electron transistor: energy-level broadening effect and thermionic contribution”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1711–1715 ; Semiconductors, 51:12 (2017), 1656–1660 |