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Publications in Math-Net.Ru |
Citations |
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2018 |
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V. A. Romaka, P. -F. Rogl, D. Frushart, D. Kaczorowski, “Mechanism of the generation of donor–acceptor pairs in heavily doped $n$-ZrNiSn with the Ga acceptor impurity”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 311–321   ; Semiconductors, 52:3 (2018), 294–304 |
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2017 |
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V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, V. Ya. Krayovskyy, Yu. V. Stadnyk, A. M. Horyn, “Features of the band structure and conduction mechanisms of $n$-HfNiSn heavily doped with Y”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 147–153 ; Semiconductors, 51:2 (2017), 139–145 |
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2016 |
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V. A. Romaka, P. Rogl, V. V. Romaka, D. Kaczorowski, Yu. V. Stadnyk, V. Ya. Krayovskyy, A. M. Horyn, “Features of conductivity mechanisms in heavily doped compensated V$_{1-x}$Ti$_{x}$FeSb semiconductor”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 877–885 ; Semiconductors, 50:7 (2016), 860–868 |
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