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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
V. V. Privezentsev, V. S. Kulikauskas, V. A. Skuratov, O. S. Zilova, A. A. Burmistrov, M. Yu. Presniakov, A. V. Goryachev, “Structure and properties of Zn-implanted Si near-surface layer modification depending on irradiation fluence of $^{132}$Xe$^{26+}$ ions with energy of 167 MeV”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 332–339   ; Semiconductors, 53:3 (2019), 313–320 |
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2018 |
| 2. |
V. V. Privezentsev, E. P. Kirilenko, A. V. Goryachev, A. V. Lutzau, “Formation of precipitates in Si implanted with $^{64}$Zn$^{+}$ and $^{16}$O$^{+}$ ions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 827–835 ; Semiconductors, 52:8 (2018), 961–968 |
| 3. |
V. V. Privezentsev, A. V. Makunin, A. A. Batrakov, S. V. Ksenich, A. V. Goryachev, “Nanoparticle formation in Zn$^{+}$ and O$^{+}$ ion sequentially implanted SiO$_{2}$ film”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 521 ; Semiconductors, 52:5 (2018), 645–650 |
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