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Publications in Math-Net.Ru |
Citations |
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2019 |
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E. V. Erofeev, I. V. Fedin, V. V. Fedina, A. P. Fazleev, “Low-temperature Ta/Al-based ohmic contacts to AlGaN/GaN heteroepitaxial structures on silicon wafers”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 249–252   ; Semiconductors, 53:2 (2019), 237–240 |
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2017 |
| 2. |
E. V. Erofeev, I. V. Fedin, V. V. Fedina, M. V. Stepanenko, A. V. Yuryeva, “High-voltage MIS-gated GaN transistors”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1278–1281 ; Semiconductors, 51:9 (2017), 1229–1232 |
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