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Publications in Math-Net.Ru |
Citations |
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2018 |
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S. V. Mikhailovich, A. Yu. Pavlov, K. N. Tomosh, Yu. V. Fedorov, “Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:10 (2018), 61–67   ; Tech. Phys. Lett., 44:5 (2018), 435–437 |
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2017 |
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S. V. Mikhailovich, R. R. Galiev, A. V. Zuev, A. Yu. Pavlov, D. S. Ponomarev, R. A. Khabibullin, “The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN ÍÅÌÒ channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 9–14 ; Tech. Phys. Lett., 43:8 (2017), 733–735 |
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