Persons: Shapoval, Sergei Yur'evich

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Shapoval, Sergei Yur'evich

Candidate of technical sciences

	Publications in Math-Net.Ru	Citations
	2020
1.	V. I. Garmash, V. E. Zemlyakov, V. I. Egorkin, A. V. Kovalchuk, S. Yu. Shapoval, “Investigation of the effect of atomic composition on the plasma-chemical etching rate of silicon nitride in high-power transistors based on an AlGaN/GaN heterojunction”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 748–752 ; Semiconductors, 54:8 (2020), 895–899

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