|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, S. N. Timoshnev, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, S. A. Kukushkin, “Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 491–503   ; Semiconductors, 54:5 (2020), 596–608 |
3
|
|
2019 |
| 2. |
P. V. Seredin, A. S. Len'shin, D. S. Zolotukhin, D. L. Goloshchapov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, “Comprehensive study of the nanoporous si layer influence on atomic and electron structure and optical properties of A$^{\mathrm{III}}$N/por-Si heterostructures grown by plasma assisted molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 1010–1016 ; Semiconductors, 53:7 (2019), 993–999 |
2
|
|
2018 |
| 3. |
P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, M. A. Kondrashin, A. S. Len'shin, Yu. Yu. Khudyakov, A. M. Mizerov, I. N. Arsent'ev, A. N. Beltyukov, Harald Leiste, M. Rinke, “Effect of a $por$-Si buffer layer on the structure and morphology of epitaxial In$_{x}$Ga$_{1-x}$N/Si(111) heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1553–1562 ; Semiconductors, 52:13 (2018), 1653–1661 |
2
|
|
2017 |
| 4. |
A. S. Len'shin, V. M. Kashkarov, È. P. Domashevskaya, P. V. Seredin, A. N. Beltyukov, F. Z. Gilmutdinov, “Composition of nanocomposites of thin tin layers on porous silicon, formed by magnetron sputtering”, Fizika Tverdogo Tela, 59:4 (2017), 773–782 ; Phys. Solid State, 59:4 (2017), 791–800 |
| 5. |
A. I. Chukavin, R. G. Valeev, A. N. Beltyukov, “X-ray photoelectron spectroscopy studies of ZnS$_{x}$Se$_{1-x}$ nanostructures produced in a porous aluminum-oxide matrix”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1400–1403 ; Semiconductors, 51:10 (2017), 1350–1353 |
1
|
| 6. |
R. G. Valeev, A. L. Trigub, A. I. Chukavin, A. N. Beltyukov, “Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al$_{2}$O$_{3}$ of different thicknesses”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 216–221 ; Semiconductors, 51:2 (2017), 207–212 |
|
2016 |
| 7. |
R. G. Valeev, D. I. Petukhov, A. I. Chukavin, A. N. Beltyukov, “Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al$_2$O$_3$ matrices”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 269–273 ; Semiconductors, 50:2 (2016), 266–270 |
3
|
| 8. |
R. G. Valeev, D. I. Petukhov, A. I. Chukavin, A. N. Beltyukov, “Electroluminescent layers based on ZnS:Cu deposited into matrices of porous anodic Al$_{2}$O$_{3}$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 23–28 ; Tech. Phys. Lett., 42:2 (2016), 124–126 |
2
|
|
| Organisations |
|
| |
|
|
Contact us: